Inventor
HUNG HAI-HAN
CN22 patents
⚠️ This page may combine multiple inventors who share the name “HUNG HAI-HAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHANGXIN MEMORY TECH INC
13 patentsUS12114481B2Oct 8, 2024
Method for manufacturing semiconductor structure having conductive block connected to transistor on the substrate
CHANGXIN MEMORY TECH INC0 citations62
US12004342B2Jun 4, 2024
Method for manufacturing semiconductor structure and semiconductor structure
CHANGXIN MEMORY TECH INC0 citations62
US11917806B2Feb 27, 2024
Method of manufacturing semiconductor structure and semiconductor structure
CHANGXIN MEMORY TECH INC0 citations62
US11955371B2Apr 9, 2024
Semiconductor device and method for preparing semiconductor device
CHANGXIN MEMORY TECH INC0 citations59
US11984357B2May 14, 2024
Semiconductor structure and its manufacturing method
CHANGXIN MEMORY TECH INC1 citations57
US12219752B2Feb 4, 2025
Method of manufacturing semiconductor structure and semiconductor structure
CHANGXIN MEMORY TECH INC0 citations52
US12193213B2Jan 7, 2025
Semiconductor structure and method of manufacturing same
CHANGXIN MEMORY TECH INC0 citations51
US12029026B2Jul 2, 2024
Method of manufacturing semiconductor structure and semiconductor structure
CHANGXIN MEMORY TECH INC0 citations51
US11856757B2Dec 26, 2023
Method for manufacturing semiconductor structure with capacitor wires
CHANGXIN MEMORY TECH INC0 citations51
US11800699B2Oct 24, 2023
Semiconductor structure with chamfered capacitor connection line adjacent bit line and method for manufacturing semiconductor structure thereof
CHANGXIN MEMORY TECH INC0 citations51
US12002707B2Jun 4, 2024
Semiconductor structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC0 citations50
US12068361B2Aug 20, 2024
Semiconductor structure with stacked capacitors
CHANGXIN MEMORY TECH INC0 citations47
US12396157B2Aug 19, 2025
Preparation method for semiconductor structure, semiconductor structure and semiconductor memory
CHANGXIN MEMORY TECH INC0 citations46
NANYA TECHNOLOGY CORP
5 patentsUS6992021B2Jan 31, 2006
Method for forming a silicon nitride layer
NANYA TECHNOLOGY CORP8 citations73
US6417064B1Jul 9, 2002
Method for treating the surface of a deep trench
NANYA TECHNOLOGY CORP7 citations73
US7696075B2Apr 13, 2010
Method of fabricating semiconductor device having a recess channel structure therein
NANYA TECHNOLOGY CORP0 citations50
US9985105B2May 29, 2018
Method of manufacturing a PMOS transistor comprising a dual work function metal gate
NANYA TECHNOLOGY CORP0 citations38
US7666792B2Feb 23, 2010
Method for fabricating a deep trench in a substrate
NANYA TECHNOLOGY CORP0 citations37