Inventor
ADAMIK JOHN A
US9 patents
Patents
9 patentsUS6167834B1Jan 2, 2001
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
APPLIED MATERIALS INC367 citations99
US5362526ANov 8, 1994
Plasma-enhanced CVD process using TEOS for depositing silicon oxide
APPLIED MATERIALS INC484 citations99
US5354715AOct 11, 1994
Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
APPLIED MATERIALS INC132 citations99
US5000113AMar 19, 1991
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
APPLIED MATERIALS INC1,100 citations99
US4892753AJan 9, 1990
Process for PECVD of silicon oxide using TEOS decomposition
APPLIED MATERIALS INC503 citations99
US4872947AOct 10, 1989
CVD of silicon oxide using TEOS decomposition and in-situ planarization process
APPLIED MATERIALS INC522 citations99
USRE36623EMar 21, 2000
Process for PECVD of silicon oxide using TEOS decomposition
APPLIED MATERIALS INC79 citations96
US5871811AFeb 16, 1999
Method for protecting against deposition on a selected region of a substrate
APPLIED MATERIALS INC69 citations96
US5755886AMay 26, 1998
Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing
APPLIED MATERIALS INC91 citations96