Inventor

MOLAS GABRIEL

FR29 patents

⚠️ This page may combine multiple inventors who share the name “MOLAS GABRIEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MOLAS GABRIEL

COMMISSARIAT ENERGIE ATOMIQUE

Method for managing the endurance of a non-volatile rewritable memory and device for programming such a memory

Resistive random access memory device with a solid electrolyte including a region made of a first metal oxide and doped by a second element distinct from the first metal

Metal-oxide-based conductive-bridging random access memory (CBRAM) having the solid electrolyte doped with a second metal

Method for resetting an array of resistive memory cells

Three dimensional resistive random access memory and method enabling such a memory to be obtained

Method of forming a conductive filament in a living resistive memory device including a pre-forming step to form a localised path of oxygen vacancies from an interface layer

Method for manufacturing an OxRAM type resistive memory cell

Low forming voltage OxRAM memory cell, and associated method of manufacture

Resistive random access memory device

Energy recovery in filamentary resistive memories

Method for producing a floating gate with an alternation of lines of first and second materials

Method for resetting an array of resistive memory cells

Method for programming an array of resistive memory cells

Resistive memory with selector, equipped with a write capacitor, and associated writing method

Semiconductor memory component integrating a nano-battery, semiconductor device including such a component and method using such a device

Method for determining a manufacturing parameter of a resistive random access memory cell

Memory comprising a matrix of resistive memory cells, and associated method of interfacing

Method for manufacturing an OxRAM-type resistive memory cell and associated OxRAM-type memory cell

Method for programming a resistive random access memory

Method for managing the endurance of a non-volatile rewritable memory and device for programming such a memory

Method for using electrochemical components for storage of energy and information and associated electronic circuit

Method for determining a memory window of a resistive random access memory

ERNST THOMAS

Structure and production process of a microelectronic 3D memory device of flash NAND type

COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENE ALT

Non-volatile resistive memory cell comprising metal electrodes and a solid electrolyte between the metal electrodes

COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Method for determining electrical parameters used to programme a resistive random access memory

MOLAS GABRIEL

Fabrication of a memory with two self-aligned independent gates

Commissariat à l'énergie atomique et aux énergies alternatives

Electronic memory device having an electrode made of a soluble material

BUCKLEY JULIEN

Method for the realization of a crossbar array of crossed conductive or semi-conductive access lines

GELY MARC

Dual gate electronic memory cell and device with dual gate electronic memory cells