Inventor
LYONS EUGENE F
US3 patents
Patents
3 patentsUS6531739B2Mar 11, 2003
Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
PEREGRINE SEMICONDUCTOR CORP46 citations91
US7524710B2Apr 28, 2009
Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
PEREGRINE SEMICONDUCTOR CORP8 citations80
US7411250B2Aug 12, 2008
Radiation-hardened silicon-on-insulator CMOS device, and method of making the same
PEREGRINE SEMICONDUCTOR CORP0 citations48