Inventor

TOH RUI TZE

SG17 patents

⚠️ This page may combine multiple inventors who share the name “TOH RUI TZE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOH RUI TZE

GLOBALFOUNDRIES SG PTE LTD

Integrated circuits with contacts through a buried oxide layer and methods of producing the same

Grounding of silicon-on-insulator structure

Heat sink for face bonded semiconductor device

Integrated circuits with gaps

Heat dissipation and series resistance reduction of PA and RF switch in SLT by backside thick metal

Integrated circuits with selectively strained device regions and methods for fabricating same

Contact via structures of semiconductor devices

Under-source body contact

Contact via structures of semiconductor devices

Air gap with inverted T-shaped lower portion extending through at least one metal layer, and related method

Integrated circuits with deep and ultra shallow trench isolations and methods for fabricating the same

Extended drain metal-oxide-semiconductor transistor

Integrated circuits using silicon on insulator substrates and methods of manufacturing the same

Extended drain metal-oxide-semiconductor transistor

Silicon-on-insulator integrated circuit devices with body contact structures and methods for fabricating the same

GLOBALFOUNDRIES US INC

Three-dimensional integrated circuit with top chip including local interconnect for body-source coupling

Heterojunction bipolar transistors with terminals having a non-planar arrangement