Inventor
FREEMAN GREGORY GOWER
US3 patents
Patents
3 patentsUS6864560B2Mar 8, 2005
Bipolar transistor structure with a shallow isolation extension region providing reduced parasitic capacitance
IBM41 citations89
US6800921B1Oct 5, 2004
Method of fabricating a polysilicon capacitor utilizing fet and bipolar base polysilicon layers
IBM9 citations72
US6670228B2Dec 30, 2003
Method of fabricating a polysilicon capacitor utilizing FET and bipolar base polysilicon layers
IBM7 citations72