Inventor
HOLT JUDSON
US19 patents
⚠️ This page may combine multiple inventors who share the name “HOLT JUDSON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES US INC
12 patentsUS11803009B2Oct 31, 2023
Photonics structures having a locally-thickened dielectric layer
GLOBALFOUNDRIES US INC4 citations75
US11063139B2Jul 13, 2021
Heterojunction bipolar transistors with airgap isolation
GLOBALFOUNDRIES US INC3 citations73
US11199672B1Dec 14, 2021
Multiple waveguide coupling to one or more photodetectors
GLOBALFOUNDRIES US INC2 citations71
US12265255B2Apr 1, 2025
Electro-absorption modulators with stacked waveguide tapers
GLOBALFOUNDRIES US INC0 citations62
US11848374B2Dec 19, 2023
Bipolar junction transistors including a portion of a base layer inside a cavity in a dielectric layer
GLOBALFOUNDRIES US INC0 citations62
US11835764B2Dec 5, 2023
Multiple-core heterogeneous waveguide structures including multiple slots
GLOBALFOUNDRIES US INC0 citations62
US11164795B2Nov 2, 2021
Transistors with source/drain regions having sections of epitaxial semiconductor material
GLOBALFOUNDRIES US INC1 citations62
US11133417B1Sep 28, 2021
Transistors with a sectioned epitaxial semiconductor layer
GLOBALFOUNDRIES US INC1 citations61
US12113070B2Oct 8, 2024
Transistor integration on a silicon-on-insulator substrate
GLOBALFOUNDRIES US INC0 citations56
US11567266B1Jan 31, 2023
Angled grating couplers with inclined side edge portions
GLOBALFOUNDRIES US INC0 citations51
US11127843B2Sep 21, 2021
Asymmetrical lateral heterojunction bipolar transistors
GLOBALFOUNDRIES US INC0 citations51
US11916136B2Feb 27, 2024
Lateral bipolar junction transistors including a graded silicon-germanium intrinsic base
GLOBALFOUNDRIES US INC0 citations50
IBM
3 patentsUS7595010B2Sep 29, 2009
Method for producing a doped nitride film, doped oxide film and other doped films
IBM57 citations97
US7361611B2Apr 22, 2008
Doped nitride film, doped oxide film and other doped films
IBM55 citations97
US7001844B2Feb 21, 2006
Material for contact etch layer to enhance device performance
IBM74 citations97