P

Inventor

HOLT JUDSON

US19 patents
⚠️ This page may combine multiple inventors who share the name “HOLT JUDSON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES US INC

12 patents
US11803009B2Oct 31, 2023

Photonics structures having a locally-thickened dielectric layer

GLOBALFOUNDRIES US INC4 citations75
US11063139B2Jul 13, 2021

Heterojunction bipolar transistors with airgap isolation

GLOBALFOUNDRIES US INC3 citations73
US11199672B1Dec 14, 2021

Multiple waveguide coupling to one or more photodetectors

GLOBALFOUNDRIES US INC2 citations71
US12265255B2Apr 1, 2025

Electro-absorption modulators with stacked waveguide tapers

GLOBALFOUNDRIES US INC0 citations62
US11848374B2Dec 19, 2023

Bipolar junction transistors including a portion of a base layer inside a cavity in a dielectric layer

GLOBALFOUNDRIES US INC0 citations62
US11835764B2Dec 5, 2023

Multiple-core heterogeneous waveguide structures including multiple slots

GLOBALFOUNDRIES US INC0 citations62
US11164795B2Nov 2, 2021

Transistors with source/drain regions having sections of epitaxial semiconductor material

GLOBALFOUNDRIES US INC1 citations62
US11133417B1Sep 28, 2021

Transistors with a sectioned epitaxial semiconductor layer

GLOBALFOUNDRIES US INC1 citations61
US12113070B2Oct 8, 2024

Transistor integration on a silicon-on-insulator substrate

GLOBALFOUNDRIES US INC0 citations56
US11567266B1Jan 31, 2023

Angled grating couplers with inclined side edge portions

GLOBALFOUNDRIES US INC0 citations51
US11127843B2Sep 21, 2021

Asymmetrical lateral heterojunction bipolar transistors

GLOBALFOUNDRIES US INC0 citations51
US11916136B2Feb 27, 2024

Lateral bipolar junction transistors including a graded silicon-germanium intrinsic base

GLOBALFOUNDRIES US INC0 citations50

IBM

3 patents

GLOBALFOUNDRIES INC

2 patents

CHARTERED SEMICONDUCTOR MFG

1 patent

CHONG YUNG FU

1 patent