P

Inventor

HAYASHI HISAO

JP69 patents
⚠️ This page may combine multiple inventors who share the name “HAYASHI HISAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SONY CORP

34 patents
US4003072AJan 11, 1977

Semiconductor device with high voltage breakdown resistance

SONY CORP175 citations99
US6943369B2Sep 13, 2005

Substrate for integrating and forming a thin film semiconductor device thereon

SONY CORP76 citations98
US6815240B2Nov 9, 2004

Thin film semiconductor device and manufacturing method thereof

SONY CORP76 citations98
US6153893ANov 28, 2000

Thin film semiconductor device for display

SONY CORP255 citations98
US6468839B2Oct 22, 2002

Thin film semiconductor device for display and method of producing same

SONY CORP99 citations97
US6020224AFeb 1, 2000

Method for making thin film transistor

SONY CORP132 citations97
US5585951ADec 17, 1996

Active-matrix substrate

SONY CORP368 citations97
US5208690AMay 4, 1993

Liquid crystal display having a plurality of pixels with switching transistors

SONY CORP82 citations96
US4980308ADec 25, 1990

Method of making a thin film transistor

SONY CORP68 citations96
US6248606B1Jun 19, 2001

Method of manufacturing semiconductor chips for display

SONY CORP62 citations95
US5888839AMar 30, 1999

Method of manufacturing semiconductor chips for display

SONY CORP56 citations95
US5140391AAug 18, 1992

Thin film MOS transistor having pair of gate electrodes opposing across semiconductor layer

SONY CORP68 citations95
US4693759ASep 15, 1987

Method of forming a thin semiconductor film

SONY CORP88 citations94
US5616960AApr 1, 1997

Multilayered interconnection substrate having a resin wall formed on side surfaces of a contact hole

SONY CORP31 citations93
US5242844ASep 7, 1993

Semiconductor device with polycrystalline silicon active region and method of fabrication thereof

SONY CORP21 citations93
US5172203ADec 15, 1992

Semiconductor device with polycrystalline silicon active region and method of fabrication thereof

SONY CORP29 citations93
US6653179B1Nov 25, 2003

Method for manufacturing a thin film semiconductor device, method for manufacturing a display device, method for manufacturing a thin film transistors, and method for forming a semiconductor thin film

SONY CORP31 citations92
US6440824B1Aug 27, 2002

Method of crystallizing a semiconductor thin film, and method of manufacturing a thin-film semiconductor device

SONY CORP35 citations92
US6396079B1May 28, 2002

Thin film semiconductor device having a buffer layer

SONY CORP45 citations92
US6015720AJan 18, 2000

Method of forming polycrystalline semiconductor thin film

SONY CORP28 citations92
US5162892ANov 10, 1992

Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer

SONY CORP50 citations92
US4084986AApr 18, 1978

Method of manufacturing a semi-insulating silicon layer

SONY CORP48 citations92
US3971061AJul 20, 1976

Semiconductor device with a high breakdown voltage characteristic

SONY CORP39 citations92
US4062034ADec 6, 1977

Semiconductor device having a hetero junction

SONY CORP42 citations90
US4651674AMar 24, 1987

Apparatus for vapor deposition

SONY CORP25 citations89
US6952021B2Oct 4, 2005

Thin-film transistor and method for making the same

SONY CORP15 citations84
US6410961B1Jun 25, 2002

Thin film semiconductor device and display device

SONY CORP17 citations84
US4302763ANov 24, 1981

Semiconductor device

SONY CORP27 citations81
US4203780AMay 20, 1980

Fe Ion implantation into semiconductor substrate for reduced lifetime sensitivity to temperature

SONY CORP22 citations81
US4176372ANov 27, 1979

Semiconductor device having oxygen doped polycrystalline passivation layer

SONY CORP28 citations81
US4014037AMar 22, 1977

Semiconductor device

SONY CORP24 citations81
US4062707ADec 13, 1977

Utilizing multiple polycrystalline silicon masks for diffusion and passivation

SONY CORP23 citations80
US4820652AApr 11, 1989

Manufacturing process and structure of semiconductor memory devices

SONY CORP12 citations74
US5825442AOct 20, 1998

Liquid crystal display device and method for making same having a diffuser made of spherical particles in a transparent body

SONY CORP10 citations73

FUJITSU LTD

6 patents

KAWAGUCHIYA FIREARMS

4 patents

NEC CORP

3 patents

NIPPON SILICONE KK

1 patent

NIPPON STEEL CORP

1 patent

TOKYO KEIKI KK

1 patent

Showing the top 50 of 69 patents by PatentIndex Score.