Inventor
NG WAI T
CA6 patents
Patents
6 patentsUS5304827AApr 19, 1994
Performance lateral double-diffused MOS transistor
TEXAS INSTRUMENTS INC120 citations97
US5406110AApr 11, 1995
Resurf lateral double diffused insulated gate field effect transistor
TEXAS INSTRUMENTS INC58 citations96
US5306652AApr 26, 1994
Lateral double diffused insulated gate field effect transistor fabrication process
TEXAS INSTRUMENTS INC67 citations96
US5382535AJan 17, 1995
Method of fabricating performance lateral double-diffused MOS transistor
TEXAS INSTRUMENTS INC31 citations92
US5585657ADec 17, 1996
Windowed and segmented linear geometry source cell for power DMOS processes
TEXAS INSTRUMENTS INC10 citations73
US5578514ANov 26, 1996
Lateral double diffused insulated gate field effect transistor and fabrication process
TEXAS INSTRUMENTS INC13 citations73