Inventor
TSAI WILLMAN
US6 patents
⚠️ This page may combine multiple inventors who share the name “TSAI WILLMAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
3 patentsUS7759142B1Jul 20, 2010
Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
INTEL CORP29 citations96
US7947971B2May 24, 2011
Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
INTEL CORP24 citations92
US10084058B2Sep 25, 2018
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
INTEL CORP7 citations84
MAJHI PRASHANT
3 patentsUS8258498B2Sep 4, 2012
Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains
MAJHI PRASHANT15 citations92
US8501508B2Aug 6, 2013
Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains
MAJHI PRASHANT7 citations83
US9443936B2Sep 13, 2016
Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
MAJHI PRASHANT0 citations51