Inventor
MISUMI TERUO
JP54 patents
Patents
50 patentsUS4265991AMay 5, 1981
Electrophotographic photosensitive member and process for production thereof
CANON KK185 citations99
US4972799ANov 27, 1990
Microwave plasma chemical vapor deposition apparatus for mass-producing functional deposited films
CANON KK30 citations93
US5443645AAug 22, 1995
Microwave plasma CVD apparatus comprising coaxially aligned multiple gas pipe gas feed structure
CANON KK50 citations92
US5640663AJun 17, 1997
Electrophotographic method using a cleaning blade to remove residual toner
CANON KK13 citations82
US4613558ASep 23, 1986
Hydrogenated amorphous silicon photosensitive method for electrophotography
CANON KK10 citations82
US4557990ADec 10, 1985
Hydrogenated amorphous silicon photosensitive member for electrophotography
CANON KK10 citations82
US4552824ANov 12, 1985
Electrophotographic photosensitive member and process for production thereof
CANON KK14 citations82
US4507375AMar 26, 1985
Electrophotographic photosensitive member and process for production thereof
CANON KK15 citations82
US4461819AJul 24, 1984
Image-forming member for electrophotography
CANON KK21 citations82
US4452874AJun 5, 1984
Photoconductive member with multiple amorphous Si layers
CANON KK21 citations82
US4452875AJun 5, 1984
Amorphous photoconductive member with α-Si interlayers
CANON KK26 citations82
US4451547AMay 29, 1984
Electrophotographic α-Si(H) member and process for production thereof
CANON KK17 citations82
US5756250AMay 26, 1998
Electrophotographic method using a cleaning blade to remove residual toner
CANON KK6 citations74
US5658703AAug 19, 1997
Electrophotographic photosensitive member and process for production thereof
CANON KK3 citations74
US5585149ADec 17, 1996
CVD method for forming a photoconductive hydrogenated a-Si layer
CANON KK7 citations74
USRE35198EApr 2, 1996
Image forming member for electrophotography
CANON KK5 citations74
US4998968AMar 12, 1991
Plasma CVD apparatus
CANON KK16 citations74
US4795688AJan 3, 1989
Layered photoconductive member comprising amorphous silicon
CANON KK9 citations74
US4707210ANov 17, 1987
Plasma CVD apparatus
CANON KK13 citations74
US4705733ANov 10, 1987
Member having light receiving layer and substrate with overlapping subprojections
CANON KK13 citations74
US4705731ANov 10, 1987
Member having substrate with protruding surface light receiving layer of amorphous silicon and surface reflective layer
CANON KK8 citations74
US4696884ASep 29, 1987
Member having photosensitive layer with series of smoothly continuous non-parallel interfaces
CANON KK10 citations74
US4696881ASep 29, 1987
Member having light receiving layer with smoothly connected interfaces
CANON KK8 citations74
US4670369AJun 2, 1987
Image-forming member for electrophotography
CANON KK9 citations74
US4650736AMar 17, 1987
Light receiving member having photosensitive layer with non-parallel interfaces
CANON KK16 citations74
US4551405ANov 5, 1985
Image forming process employing member with a depletion layer
CANON KK8 citations74
US4536459AAug 20, 1985
Photoconductive member having multiple amorphous layers
CANON KK12 citations74
US4529679AJul 16, 1985
Photoconductive member
CANON KK18 citations74
US4522905AJun 11, 1985
Amorphous silicon photoconductive member with interface and rectifying layers
CANON KK12 citations74
US4501807AFeb 26, 1985
Photoconductive member having an amorphous silicon layer
CANON KK9 citations74
US4490454ADec 25, 1984
Photoconductive member comprising multiple amorphous layers
CANON KK11 citations74
US4486521ADec 4, 1984
Photoconductive member with doped and oxygen containing amorphous silicon layers
CANON KK13 citations74
US4202937AMay 13, 1980
Electrophotographic photosensitive member having no fatigue effect
CANON KK14 citations72
US4720443AJan 19, 1988
Member having light receiving layer with nonparallel interfaces
CANON KK6 citations63
US4705735ANov 10, 1987
Member having substrate with protruding surface portions and light receiving layer with amorphous silicon matrix
CANON KK5 citations63
US4701392AOct 20, 1987
Member having light receiving layer with nonparallel interfaces and antireflection layer
CANON KK2 citations63
US4696882ASep 29, 1987
Member having light receiving layer with smoothly interconnecting nonparallel interfaces
CANON KK3 citations63
US4696883ASep 29, 1987
Member having light receiving layer with smoothly connected non-parallel interfaces and surface reflective layer
CANON KK3 citations63
US4675263AJun 23, 1987
Member having substrate and light-receiving layer of A-Si:Ge film and A-Si film with non-parallel interface with substrate
CANON KK3 citations63
US4636450AJan 13, 1987
Photoconductive member having amorphous silicon matrix with oxygen and impurity containing regions
CANON KK3 citations63
US4592985AJun 3, 1986
Photoconductive member having amorphous silicon layers
CANON KK4 citations63
US4555465ANov 26, 1985
Photoconductive member of amorphous silicon
CANON KK3 citations63
US4547448AOct 15, 1985
Photoconductive member comprising silicon and oxygen
CANON KK5 citations63
US4536460AAug 20, 1985
Photoconductive member
CANON KK5 citations63
US4518671AMay 21, 1985
Electrophotographic photosensitive Se or Se alloy doped with oxygen
CANON KK5 citations63
US4315063AFeb 9, 1982
Electrophotographic photosensitive member having a halogen containing charge injection layer
CANON KK3 citations63
US4241158ADec 23, 1980
Vacuum deposited electrophotographic photosensitive member
CANON KK4 citations63
US4308331ADec 29, 1981
Screen photosensitive member and electrophotographic method
CANON KK6 citations60
US4705732ANov 10, 1987
Member having substrate with projecting portions at surface and light receiving layer of amorphous silicon
CANON KK1 citations52
US4705730ANov 10, 1987
Light-receiving member
CANON KK0 citations52
Showing the top 50 of 54 patents by PatentIndex Score.