Inventor
JARIWALA DEEP M
US6 patents
Patents
6 patentsUS9515257B2Dec 6, 2016
Gate-tunable atomically-thin memristors and methods for preparing same and applications of same
UNIV NORTHWESTERN3 citations71
US9472686B2Oct 18, 2016
Gate-tunable P-N heterojunction diode, and fabrication method and application of same
UNIV NORTHWESTERN4 citations70
US10784848B2Sep 22, 2020
System and method for anti-ambipolar heterojunctions from solution-processed semiconductors
UNIV NORTHWESTERN0 citations50
US10491206B2Nov 26, 2019
System and method for anti-ambipolar heterojunctions from solution-processed semiconductors
UNIV NORTHWESTERN0 citations50
US9929725B2Mar 27, 2018
System and method for anti-ambipolar heterojunctions from solution-processed semiconductors
UNIV NORTHWESTERN0 citations50
US9972799B2May 15, 2018
Gate-tunable p-n heterojunction diode, and fabrication method and application of same
UNIV NORTHWESTERN0 citations49