Inventor · disambiguated record
Reda R. Razouk
Also filed as: RAZOUK REDA · RAZOUK REDA R
21 granted patents·417 citations·filing 1983–2011
96Inventor score
Files withNAT SEMICONDUCTOR CORP17EASTMAN KODAK CO1FAIRCHILD CAMERA INSTR CO1RAZOUK REDA R1SMEYS PETER1
Top patents by PatentIndex Score
21 records- 0193US7902661B2Integrated circuit micro-moduleNAT SEMICONDUCTOR CORP·Filed 2009·Granted Mar 8, 2011·26 cites·10 claims
- 0292US6365447B1High-voltage complementary bipolar and BiCMOS technology using double expitaxial growthNAT SEMICONDUCTOR CORP·Filed 1998·Granted Apr 2, 2002·107 cites·1 claims
- 0384US7709956B2Copper-topped interconnect structure that has thin and thick copper traces and method of forming the copper-topped interconnect structureNAT SEMICONDUCTOR CORP·Filed 2008·Granted May 4, 2010·10 cites·8 claims
- 0482US5581110AIntegrated circuit with trenches and an oxygen barrier layerNAT SEMICONDUCTOR CORP·Filed 1995·Granted Dec 3, 1996·62 cites·47 claims
- 0580US8822266B2Integrated circuit micro-moduleSMEYS PETER·Filed 2011·Granted Sep 2, 2014·5 cites·19 claims
- 0674US6380017B1Polysilicon-edge, base-emitter super self-aligned, low-power, high-frequency bipolar transistor and method of forming the transistorNAT SEMICONDUCTOR CORP·Filed 2001·Granted Apr 30, 2002·20 cites·19 claims
- 0770US6475848B1Polysilicon-edge, low-power, high-frequency bipolar transistor and method of forming the transistorNAT SEMICONDUCTOR CORP·Filed 2001·Granted Nov 5, 2002·14 cites·18 claims
- 0864US5911109AMethod of forming an integrated circuit including filling and planarizing a trench having an oxygen barrier layerNAT SEMICONDUCTOR CORP·Filed 1997·Granted Jun 8, 1999·27 cites·41 claims
- 0962US7067895B1Color imager cell with transistors formed under the photodiodesEASTMAN KODAK CO·Filed 2003·Granted Jun 27, 2006·9 cites·5 claims
- 1061US5082796AUse of polysilicon layer for local interconnect in a CMOS or BiCMOS technology incorporating sidewall spacersNAT SEMICONDUCTOR CORP·Filed 1990·Granted Jan 21, 1992·31 cites·38 claims
- 1160US6603188B1Polysilicon-edge, low-power, high-frequency bipolar transistor and method of forming the transistorNAT SEMICONDUCTOR CORP·Filed 2002·Granted Aug 5, 2003·8 cites·2 claims
- 1259US6730969B1Radiation hardened MOS transistorNAT SEMICONDUCTOR CORP·Filed 2002·Granted May 4, 2004·9 cites·21 claims
- 1359US4455325AMethod of inducing flow or densification of phosphosilicate glass for integrated circuitsFAIRCHILD CAMERA INSTR CO·Filed 1983·Granted Jun 19, 1984·21 cites·9 claims
- 1454US5081518AUse of a polysilicon layer for local interconnect in a CMOS or BICMOS technology incorporating sidewall spacersNAT SEMICONDUCTOR CORP·Filed 1990·Granted Jan 14, 1992·23 cites·19 claims
- 1553US5001081AMethod of manufacturing a polysilicon emitter and a polysilicon gate using the same etch of polysilicon on a thin gate oxideNAT SEMICONDUCTOR CORP·Filed 1989·Granted Mar 19, 1991·20 cites·36 claims
- 1651US8686332B2Optically-controlled shunt circuit for maximizing photovoltaic panel efficiencyRAZOUK REDA R·Filed 2011·Granted Apr 1, 2014·0 cites·12 claims
- 1748US6548323B1Method of preparing light-sensitive integrated circuits for packagingNAT SEMICONDUCTOR CORP·Filed 2000·Granted Apr 15, 2003·4 cites·29 claims
- 1846US5179031AMethod of manufacturing a polysilicon emitter and a polysilicon gate using the same etch of polysilicon on a thin gate oxideNAT SEMICONDUCTOR CORP·Filed 1990·Granted Jan 12, 1993·11 cites·9 claims
- 1939US6696342B1Small emitter and base-collector bi-polar transistorNAT SEMICONDUCTOR CORP·Filed 2001·Granted Feb 24, 2004·2 cites·1 claims
- 2038US6723593B1Deep submicron MOS transistor with increased threshold voltageNAT SEMICONDUCTOR CORP·Filed 2002·Granted Apr 20, 2004·0 cites·20 claims
- 2135US5124817APolysilicon emitter and a polysilicon gate using the same etch of polysilicon on a thin gate oxideNAT SEMICONDUCTOR CORP·Filed 1991·Granted Jun 23, 1992·8 cites·2 claims
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