Inventor

CHANG TONY LIANG-TUNG

TW2 patents

Patents

2 patents

US5801097ASep 1, 1998

Thermal annealing method employing activated nitrogen for forming nitride layers

VANGUARD INT SEMICONDUCT CORP64 citations89

US6004877ADec 21, 1999

Method of forming a tungsten layer with N2 plasma treatment

VANGUARD INT SEMICONDUCT CORP5 citations58