Inventor
JUERGENSEN HOLGER
DE21 patents
⚠️ This page may combine multiple inventors who share the name “JUERGENSEN HOLGER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AIXTRON AG
13 patentsUS6849241B2Feb 1, 2005
Device and method for depositing one or more layers on a substrate
AIXTRON AG401 citations96
US7147718B2Dec 12, 2006
Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
AIXTRON AG30 citations92
US7078318B2Jul 18, 2006
Method for depositing III-V semiconductor layers on a non-III-V substrate
AIXTRON AG42 citations91
US6309465B1Oct 30, 2001
CVD reactor
AIXTRON AG49 citations91
US6962624B2Nov 8, 2005
Method and device for depositing in particular organic layers using organic vapor phase deposition
AIXTRON AG38 citations89
US7762208B2Jul 27, 2010
Loading and unloading apparatus for a coating device
AIXTRON AG17 citations84
US6279506B1Aug 28, 2001
Reactor for coating plane substrates and method for producing said substrates
AIXTRON AG15 citations81
US7135073B2Nov 14, 2006
Method and system for semiconductor crystal production with temperature management
AIXTRON AG15 citations76
US7067012B2Jun 27, 2006
CVD coating device
AIXTRON AG9 citations73
US7332038B2Feb 19, 2008
Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates
AIXTRON AG5 citations62
US6905548B2Jun 14, 2005
Device for the deposition of crystalline layers on crystalline substrates
AIXTRON AG5 citations62
US6506450B2Jan 14, 2003
Reactor for coating flat substrates and process for manufacturing such substrates
AIXTRON AG3 citations60
US7473316B1Jan 6, 2009
Method of growing nitrogenous semiconductor crystal materials
AIXTRON AG3 citations55
AIXTRON GMBH
4 patentsUS5441703AAug 15, 1995
Gas inlet for a plurality of reactant gases into reaction vessel
AIXTRON GMBH170 citations98
US4991540AFeb 12, 1991
Quartz-glass reactor for MOCVD systems
AIXTRON GMBH46 citations91
US5348911ASep 20, 1994
Material-saving process for fabricating mixed crystals
AIXTRON GMBH88 citations89
US5162256ANov 10, 1992
Process for producing doped semiconductor layers
AIXTRON GMBH10 citations73
MERCK PATENT GMBH
4 patentsUS5015747AMay 14, 1991
Organometallic compounds
MERCK PATENT GMBH26 citations92
US4880492ANov 14, 1989
Organometallic compounds
MERCK PATENT GMBH20 citations81
US5112432AMay 12, 1992
Organometallic compounds
MERCK PATENT GMBH13 citations72
US4903722AFeb 27, 1990
Extraction valve head for tanks
MERCK PATENT GMBH12 citations72