Inventor
TAKIKAWA MASAHIKO
JP14 patents
⚠️ This page may combine multiple inventors who share the name “TAKIKAWA MASAHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
10 patentsUS5302840AApr 12, 1994
HEMT type semiconductor device having two semiconductor well layers
FUJITSU LTD63 citations95
US5818078AOct 6, 1998
Semiconductor device having a regrowth crystal region
FUJITSU LTD20 citations92
US5900641AMay 4, 1999
Field effect semiconductor device having a reduced leakage current
FUJITSU LTD16 citations73
US5148245ASep 15, 1992
Semiconductor device having a selectively doped heterostructure
FUJITSU LTD8 citations73
US5104825AApr 14, 1992
Method of producing a semiconductor device
FUJITSU LTD11 citations73
US4958203ASep 18, 1990
High electron mobility transistor
FUJITSU LTD8 citations73
US5128275AJul 7, 1992
Method for fabricating a semiconductor device including a semi-insulating semiconductor layer
FUJITSU LTD7 citations72
US5949095ASep 7, 1999
Enhancement type MESFET
FUJITSU LTD16 citations71
US5945695AAug 31, 1999
Semiconductor device with InGaP channel layer
FUJITSU LTD3 citations62
US5170230ADec 8, 1992
Semiconductor device and production method thereof
FUJITSU LTD4 citations62