Inventor

KIKKAWA TOSHIHIDE

JP87 patents

⚠️ This page may combine multiple inventors who share the name “KIKKAWA TOSHIHIDE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KIKKAWA TOSHIHIDE

FUJITSU LTD

Semiconductor device having a regrowth crystal region

Apparatus for generating raw material gas used in apparatus for growing thin film

Nitride semiconductor device, Doherty amplifier and drain voltage controlled amplifier

Compound semiconductor device

Compound semiconductor device and method for fabricating the same

Compound semiconductor device

Semiconductor device and method for fabricating the same

Method for growing III-V group compound semiconductor crystal

Method for growing III-V group compound semiconductor crystal

Compound semiconductor device

Semiconductor device having a regrowth crystal region

Method of forming compound semiconductor device

Semiconductor device having an isolation region enriched in oxygen

Compound semiconductor device and its manufacture

Semiconductor device and method of fabricating the semiconductor device

Compound semiconductor device and method of manufacturing the same

Compound semiconductor device and manufacturing method of the same

Compound semiconductor device and the fabricating method of the same

Compound semiconductor device and method for fabricating the same

Compound semiconductor device using SiC substrate and its manufacture

Compound semiconductor device and method of fabricating the same

Semiconductor device formed on a substrate having an off-angle surface and a fabrication process thereof

Semiconductor device formed on a substrate having an off-angle surface

Semiconductor device having an isolation region enriched in oxygen and a fabrication process thereof

Semiconductor device

Method of manufacturing compound semiconductor device

Semiconductor device having improved electronic isolation

Group III-V interdiffusion prevented hetero-junction semiconductor device

Method for fabricating a semiconductor device including a semi-insulating semiconductor layer

Compound semiconductor device and method of manufacturing the same

Compound semiconductor device

Compound semiconductor device and manufacturing method of the same

Compound semiconductor device

TRANSPHORM JAPAN INC

Semiconductor device and manufacturing method of semiconductor device

Semiconductor device and manufacturing method of semiconductor device

Compound semiconductor device and manufacturing method of the same

Semiconductor device and manufacturing method of semiconductor device

Compound semiconductor device and method of manufacturing the same

Compound semiconductor device and manufacturing method of the same

IMANISHI KENJI

Compound semiconductor device and method of manufacturing the same

Compound semiconductor device including AIN layer of controlled skewness

IMADA TADAHIRO

Compound semiconductor device and method for manufacturing the same

KIKKAWA TOSHIHIDE

Compound semiconductor device and method of manufacturing the same

KANAMURA MASAHITO

Compound semiconductor device including first film on compound semiconductor layer and second film on first film and method of manufacturing the same

TRANSPHORM INC

Recessed ohmic contacts in a III-N device

OHKI TOSHIHIRO

Compound semiconductor device and manufacturing method thereof

MINOURA YUICHI

Compound semiconductor device comprising compound semiconductor layered structure having buffer layer and method of manufacturing the same

TRANSPHORM TECH INC

Enhancement mode III-nitride devices having an Al1-xSixO gate insulator

NISHIMORI MASATO

Semiconductor device and method for manufacturing semiconductor device

MIYAJIMA TOYOO

Compound semiconductor device and method of manufacturing the same