Inventor

SHIDELER JAY ALBERT

US2 patents

Patents

2 patents

US6699765B1Mar 2, 2004

Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer

MICREL INC30 citations85

US6913981B2Jul 5, 2005

Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer

MICREL INC2 citations55