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Inventor
BECHDOLT ROBERT WILLIAM
US
2 patents
Patents
2 patents
US6699765B1
Mar 2, 2004
Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer
MICREL INC
30 citations
85
US6913981B2
Jul 5, 2005
Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer
MICREL INC
2 citations
55