Inventor

TOGAWA SHINJI

JP6 patents

⚠️ This page may combine multiple inventors who share the name “TOGAWA SHINJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JAPAN RES DEV CORP

3 patents

US5704974AJan 6, 1998

Growth of silicon crystal from melt having extraordinary eddy flows on its surface

JAPAN RES DEV CORP7 citations72

US5700320ADec 23, 1997

Growth of silicon single crystal having uniform impurity distribution along lengthwise or radial direction

JAPAN RES DEV CORP8 citations72

US5683504ANov 4, 1997

Growth of silicon single crystal

JAPAN RES DEV CORP6 citations61

KOMATSU DENSHI KINZOKU KK

1 patent

US6869478B2Mar 22, 2005

Method for producing silicon single crystal having no flaw

KOMATSU DENSHI KINZOKU KK29 citations92

SUMCO TECHXIV CORP

1 patent

US8382895B2Feb 26, 2013

Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program

SUMCO TECHXIV CORP0 citations50

TOGAWA SHINJI

1 patent

US9181631B2Nov 10, 2015

Silicon crystalline material and method for manufacturing the same

TOGAWA SHINJI0 citations38