Inventor
IKARI ATSUSHI
JP20 patents
⚠️ This page may combine multiple inventors who share the name “IKARI ATSUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
THINKON NEW TECH JAPAN CORPORATION
7 patentsUS11348764B2May 31, 2022
Electrode ring
THINKON NEW TECH JAPAN CORPORATION2 citations71
US11551915B2Jan 10, 2023
Method of manufacturing ring-shaped member and ring-shaped member
THINKON NEW TECH JAPAN CORPORATION0 citations61
US10984988B2Apr 20, 2021
Method of manufacturing ring-shaped member and ring-shaped member
THINKON NEW TECH JAPAN CORPORATION0 citations61
US10580621B2Mar 3, 2020
Electrode Plate
THINKON NEW TECH JAPAN CORPORATION0 citations51
US10553405B2Feb 4, 2020
Ring-shaped electrode
THINKON NEW TECH JAPAN CORPORATION0 citations51
US11545345B2Jan 3, 2023
Protective material ring
THINKON NEW TECH JAPAN CORPORATION0 citations50
US11380525B2Jul 5, 2022
Ring for electrode
THINKON NEW TECH JAPAN CORPORATION0 citations50
SILTRONIC AG
4 patentsUS7208043B2Apr 24, 2007
Silicon semiconductor substrate and preparation thereof
SILTRONIC AG9 citations71
US7470323B2Dec 30, 2008
Process for producing p-doped and epitaxially coated semiconductor wafers from silicon
SILTRONIC AG4 citations62
US8043929B2Oct 25, 2011
Semiconductor substrate and method for production thereof
SILTRONIC AG2 citations61
US6805742B2Oct 19, 2004
Silicon semiconductor substrate and process for producing the same
SILTRONIC AG6 citations58
NIPPON STEEL CORP
3 patentsUS7204887B2Apr 17, 2007
Wafer holding, wafer support member, wafer boat and heat treatment furnace
NIPPON STEEL CORP581 citations98
US6617034B1Sep 9, 2003
SOI substrate and method for production thereof
NIPPON STEEL CORP16 citations82
US6080237AJun 27, 2000
Method for production of dislocation-free silicon single crystal
NIPPON STEEL CORP11 citations67
JAPAN RES DEV CORP
3 patentsUS5704974AJan 6, 1998
Growth of silicon crystal from melt having extraordinary eddy flows on its surface
JAPAN RES DEV CORP7 citations72
US5700320ADec 23, 1997
Growth of silicon single crystal having uniform impurity distribution along lengthwise or radial direction
JAPAN RES DEV CORP8 citations72
US5683504ANov 4, 1997
Growth of silicon single crystal
JAPAN RES DEV CORP6 citations61