Inventor
YANG SHANG-CHI
TW34 patents
⚠️ This page may combine multiple inventors who share the name “YANG SHANG-CHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
33 patentsUS11132176B2Sep 28, 2021
Non-volatile computing method in flash memory
MACRONIX INT CO LTD11 citations86
US10783963B1Sep 22, 2020
In-memory computation device with inter-page and intra-page data circuits
MACRONIX INT CO LTD11 citations86
US10860043B2Dec 8, 2020
Fast transient response voltage regulator with pre-boosting
MACRONIX INT CO LTD10 citations84
US10475510B2Nov 12, 2019
Leakage compensation read method for memory device
MACRONIX INT CO LTD7 citations84
US10042380B1Aug 7, 2018
Current flattening circuit, current compensation circuit and associated control method
MACRONIX INT CO LTD9 citations84
US9754640B1Sep 5, 2017
Sensing circuit and method utilizing voltage replication for non-volatile memory device
MACRONIX INT CO LTD14 citations84
US10115441B1Oct 30, 2018
Row decoder and memory system using the same
MACRONIX INT CO LTD7 citations83
US10620879B2Apr 14, 2020
Write-while-read access method for a memory device
MACRONIX INT CO LTD3 citations73
US10496115B2Dec 3, 2019
Fast transient response voltage regulator with predictive loading
MACRONIX INT CO LTD6 citations73
US10319449B1Jun 11, 2019
Memory device and operation method thereof
MACRONIX INT CO LTD4 citations73
US9419596B2Aug 16, 2016
Sense amplifier with improved margin
MACRONIX INT CO LTD5 citations73
US10475492B1Nov 12, 2019
Circuit and method for read latency control
MACRONIX INT CO LTD3 citations72
US11127437B2Sep 21, 2021
Managing startups of bandgap reference circuits in memory systems
MACRONIX INT CO LTD4 citations69
US8922254B2Dec 30, 2014
Drive circuitry compensated for manufacturing and environmental variation
MACRONIX INT CO LTD2 citations63
US12131772B2Oct 29, 2024
Three dimension memory device capable of improving sensing accuracy in high-speed data sensing operation
MACRONIX INT CO LTD1 citations62
US10185697B2Jan 22, 2019
Generating a transition signal for controlling memory data output
MACRONIX INT CO LTD1 citations62
US11942179B2Mar 26, 2024
Threshold voltage variation compensation in integrated circuits
MACRONIX INT CO LTD0 citations59
US11656646B2May 23, 2023
Managing reference voltages in memory systems
MACRONIX INT CO LTD1 citations59
US12160204B2Dec 3, 2024
High-speed, low distortion receiver circuit
MACRONIX INT CO LTD0 citations57
US12074739B1Aug 27, 2024
Continuous time linear equalizer of single-ended signal with input coupling capacitor
MACRONIX INT CO LTD0 citations57
US11239832B1Feb 1, 2022
Low-skew complementary signal generator
MACRONIX INT CO LTD0 citations57
US9395729B1Jul 19, 2016
Circuit driving method and device
MACRONIX INT CO LTD2 citations53
US11342010B2May 24, 2022
Managing bit line voltage generating circuits in memory devices
MACRONIX INT CO LTD0 citations52
US10515686B1Dec 24, 2019
Low voltage reference current generator and memory device using same
MACRONIX INT CO LTD0 citations52
US10395733B2Aug 27, 2019
Forming structure and method for integrated circuit memory
MACRONIX INT CO LTD0 citations52
US12205672B2Jan 21, 2025
Managing reference currents in semiconductor devices
MACRONIX INT CO LTD0 citations50
US12094554B2Sep 17, 2024
Memory device, failure bits detector and failure bits detection method thereof
MACRONIX INT CO LTD0 citations48
US11862287B2Jan 2, 2024
Managing page buffer circuits in memory devices
MACRONIX INT CO LTD0 citations48
US11394373B1Jul 19, 2022
Managing flip flop circuits
MACRONIX INT CO LTD0 citations48
US11502679B2Nov 15, 2022
Robust power-on-reset circuit with body effect technique
MACRONIX INT CO LTD0 citations46
US10566062B2Feb 18, 2020
Memory device and method for operating the same
MACRONIX INT CO LTD0 citations42
US12308049B2May 20, 2025
Decision feedback equalization in semiconductor devices
MACRONIX INT CO LTD0 citations41
US11605406B2Mar 14, 2023
Memory and sense amplifying device thereof
MACRONIX INT CO LTD0 citations41