Inventor
CHOI JEONG YEOL
US17 patents
⚠️ This page may combine multiple inventors who share the name “CHOI JEONG YEOL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEGRATED DEVICE TECH
16 patentsUS5793088AAug 11, 1998
Structure for controlling threshold voltage of MOSFET
INTEGRATED DEVICE TECH98 citations97
US5780330AJul 14, 1998
Selective diffusion process for forming both n-type and p-type gates with a single masking step
INTEGRATED DEVICE TECH58 citations96
US6898561B1May 24, 2005
Methods, apparatus and computer program products for modeling integrated circuit devices having reduced linewidths
INTEGRATED DEVICE TECH25 citations92
US6894356B2May 17, 2005
SRAM system having very lightly doped SRAM load transistors for improving SRAM cell stability and method for making the same
INTEGRATED DEVICE TECH21 citations92
US6496399B1Dec 17, 2002
Compact ternary content addressable memory cell
INTEGRATED DEVICE TECH27 citations92
US5654213AAug 5, 1997
Method for fabricating a CMOS device
INTEGRATED DEVICE TECH26 citations92
US5831313ANov 3, 1998
Structure for improving latch-up immunity and interwell isolation in a semiconductor device
INTEGRATED DEVICE TECH35 citations90
US6165918ADec 26, 2000
Method for forming gate oxides of different thicknesses
INTEGRATED DEVICE TECH19 citations82
US6063676AMay 16, 2000
Mosfet with raised source and drain regions
INTEGRATED DEVICE TECH17 citations81
US5830789ANov 3, 1998
CMOS process forming wells after gate formation
INTEGRATED DEVICE TECH8 citations74
US6127710AOct 3, 2000
CMOS structure having a gate without spacers
INTEGRATED DEVICE TECH11 citations73
US6103555AAug 15, 2000
Method of improving the reliability of low-voltage programmable antifuse
INTEGRATED DEVICE TECH8 citations73
US6017785AJan 25, 2000
Method for improving latch-up immunity and interwell isolation in a semiconductor device
INTEGRATED DEVICE TECH8 citations73
US5750424AMay 12, 1998
Method for fabricating a CMOS device
INTEGRATED DEVICE TECH10 citations73
US6043129AMar 28, 2000
High density MOSFET with raised source and drain regions
INTEGRATED DEVICE TECH6 citations60
US6407008B1Jun 18, 2002
Method of forming an oxide layer
INTEGRATED DEVICE TECH6 citations59