P

Inventor

KERBER MARTIN

DE35 patents
⚠️ This page may combine multiple inventors who share the name “KERBER MARTIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SIEMENS AG

16 patents
US5916821AJun 29, 1999

Method for producing sublithographic etching masks

SIEMENS AG66 citations96
US6157060ADec 5, 2000

High density integrated semiconductor memory and method for producing the memory

SIEMENS AG49 citations92
US5976932ANov 2, 1999

Memory cell and method for producing the memory cell

SIEMENS AG30 citations92
US5882965AMar 16, 1999

Process for manufacturing an integrated CMOS circuit

SIEMENS AG24 citations92
US5882963AMar 16, 1999

Method of manufacturing semiconductor components

SIEMENS AG30 citations90
US5801428ASep 1, 1998

MOS transistor for biotechnical applications

SIEMENS AG33 citations89
US5623155AApr 22, 1997

MOSFET on SOI substrate

SIEMENS AG19 citations84
US6027972AFeb 22, 2000

Method for producing very small structural widths on a semiconductor substrate

SIEMENS AG15 citations74
US5846858ADec 8, 1998

SOI-BiCMOS method

SIEMENS AG11 citations74
US5847433ADec 8, 1998

Integrated switching circuit with CMOS circuit and method for producing isolated active regions of a CMOS circuit

SIEMENS AG15 citations74
US6433387B1Aug 13, 2002

Lateral bipolar transistor

SIEMENS AG2 citations63
US6090665AJul 18, 2000

Method of producing the source regions of a flash EEPROM memory cell array

SIEMENS AG3 citations63
US5962901AOct 5, 1999

Semiconductor configuration for an insulating transistor

SIEMENS AG2 citations63
US5925919AJul 20, 1999

CMOS Semiconductor structure and process for producing the same

SIEMENS AG5 citations63
US5817570AOct 6, 1998

Semiconductor structure for an MOS transistor and method for fabricating the semiconductor structure

SIEMENS AG1 citations52
US5728609AMar 17, 1998

Method for producing contact holes

SIEMENS AG1 citations52

INFINEON TECHNOLOGIES AG

12 patents
US7772039B2Aug 10, 2010

Procedure for arranging chips of a first substrate on a second substrate

INFINEON TECHNOLOGIES AG176 citations99
US7550986B2Jun 23, 2009

Semiconductor wafer having a dielectric reliability test structure, integrated circuit product and test method

INFINEON TECHNOLOGIES AG13 citations84
US6124156ASep 26, 2000

Process for manufacturing a CMOS circuit with all-around dielectrically insulated source-drain regions

INFINEON TECHNOLOGIES AG11 citations74
US9048019B2Jun 2, 2015

Semiconductor structure including guard ring

INFINEON TECHNOLOGIES AG3 citations63
US7782074B2Aug 24, 2010

System that detects damage in adjacent dice

INFINEON TECHNOLOGIES AG2 citations63
US7652493B2Jan 26, 2010

Test arrangement having chips of a first substrate on a second substrate and chips of the second substrate on a third substrate

INFINEON TECHNOLOGIES AG3 citations63
US7403026B2Jul 22, 2008

Electronic switching circuit, switching circuit test arrangement and method for determining the operativeness of an electronic switching circuit

INFINEON TECHNOLOGIES AG6 citations57
US6566271B1May 20, 2003

Method of producing a semiconductor surface covered with fluorine

INFINEON TECHNOLOGIES AG2 citations54
US9466677B2Oct 11, 2016

Semiconductor structure including guard ring

INFINEON TECHNOLOGIES AG0 citations52
US6404034B1Jun 11, 2002

CMOS circuit with all-around dielectrically insulated source-drain regions

INFINEON TECHNOLOGIES AG1 citations52
US6239478B1May 29, 2001

Semiconductor structure for a MOS transistor

INFINEON TECHNOLOGIES AG0 citations52
US7704853B2Apr 27, 2010

Method for the elimination of the effects of defects on wafers

INFINEON TECHNOLOGIES AG0 citations31

KERBER MARTIN

4 patents

INFINEON TECHNOLOGIES AUSTRIA AG

1 patent

QIMONDA AG

1 patent

ZIMMERLING MARTIN

1 patent