Inventor
KATATA TOMIO
JP26 patents
⚠️ This page may combine multiple inventors who share the name “KATATA TOMIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
22 patentsUS6071810AJun 6, 2000
Method of filling contact holes and wiring grooves of a semiconductor device
TOSHIBA KK101 citations99
US6423192B1Jul 23, 2002
Sputtering apparatus and film forming method
TOSHIBA KK91 citations98
US6673704B2Jan 6, 2004
Semiconductor device and method of manufacturing the same
TOSHIBA KK42 citations96
US6566632B1May 20, 2003
Hot plate and semiconductor device manufacturing method using the same
TOSHIBA KK59 citations96
US6500686B2Dec 31, 2002
Hot plate and method of manufacturing semiconductor device
TOSHIBA KK20 citations93
US6001718ADec 14, 1999
Semiconductor device having a ternary compound low resistive electrode
TOSHIBA KK22 citations93
US7399706B2Jul 15, 2008
Manufacturing method of semiconductor device
TOSHIBA KK25 citations92
US6521927B2Feb 18, 2003
Semiconductor device and method for the manufacture thereof
TOSHIBA KK41 citations92
US6521010B1Feb 18, 2003
Filter, filtering frame, and semiconductor device manufacturing method and apparatus
TOSHIBA KK33 citations92
US6307267B1Oct 23, 2001
Semiconductor device and manufacturing method thereof
TOSHIBA KK19 citations92
US6605521B2Aug 12, 2003
Method of forming an oxide film on a gate side wall of a gate structure
TOSHIBA KK21 citations91
US6140236AOct 31, 2000
High throughput A1-Cu thin film sputtering process on small contact via for manufacturable beol wiring
TOSHIBA KK39 citations91
US6699726B2Mar 2, 2004
Semiconductor device and method for the manufacture thereof
TOSHIBA KK15 citations83
US6946387B2Sep 20, 2005
Semiconductor device and method for manufacturing the same
TOSHIBA KK11 citations74
US6440843B1Aug 27, 2002
Semiconductor device and method for manufacturing the same
TOSHIBA KK5 citations74
US6048791AApr 11, 2000
Semiconductor device with electrode formed of conductive layer consisting of polysilicon layer and metal-silicide layer and its manufacturing method
TOSHIBA KK14 citations74
US7994054B2Aug 9, 2011
Semiconductor device having oxidized metal film and manufacture method of the same
TOSHIBA KK6 citations73
US7791202B2Sep 7, 2010
Semiconductor device having oxidized metal film and manufacture method of the same
TOSHIBA KK4 citations73
US6768202B2Jul 27, 2004
Semiconductor device and method of manufacturing the same
TOSHIBA KK5 citations73
US6720253B2Apr 13, 2004
Method of manufacturing semiconductor device having an aluminum wiring layer
TOSHIBA KK9 citations73
US6436813B1Aug 20, 2002
Semiconductor device and method of manufacturing the same
TOSHIBA KK5 citations73
US6313535B1Nov 6, 2001
Wiring layer of a semiconductor integrated circuit
TOSHIBA KK3 citations62