Inventor

WATANABE HIROHITO

JP45 patents

⚠️ This page may combine multiple inventors who share the name “WATANABE HIROHITO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WATANABE HIROHITO

NEC CORP

Method for fabricating polycrystalline silicon having micro roughness on the surface

Method of manufacturing thin film capacitor

Capacitor incorporated in semiconductor device having a lower electrode composed of multi-layers or of graded impurity concentration

Semiconductor device having polycrystalline silicon layer with uneven surface defined by hemispherical or mushroom like shape silicon grain

HF vapor selective etching method and apparatus

Method of producing semiconductor device with insulating film having at least silicon nitride film

Method of making a semiconductor integrated circuit device having a capacitor with a porous surface of an electrode

Method for fabricating a thin film capacitor

Method for capturing gaseous impurities and semiconductor device manufacturing apparatus

Method for fabricating polycrystalline silicon having micro roughness on the surface

Vapor selective etching method and apparatus

Method of producing silicon layer having surface controlled to be uneven

Nonvolatile semiconductor memory device and manufacturing method of the same

Method of producing silicon layer having surface controlled to be uneven or even

Method of fabricating semiconductor device having low-resistance gate electrode and diffusion layers

Stacked capacitor having a corrugated electrode

Stacked capacitor having a corrugated electrode

Semiconductor device wherein one of capacitor electrodes comprises a conductor pole and conductor layer

Process for forming a capacitor incorporated in a semiconductor device

Method of manufacturing a semiconductor memory device with a stacked capacitor wherein an electrode of the capacitor is shaped using a high melting point metal film

Process of selectively producing refractory metal silicide uniform in thickness regardless of conductivity type of silicon thereunder

Method for fabricating polycrystalline silicon having micro roughness on the surface

Nonvolatile semiconductor memory device and manufacturing method of the same

Method of manufacturing a semiconductor device wherein one of capacitor electrodes comprises a conductor pole and a tray-shaped conductor layer

Nonvolatile semiconductor memory utilizing polarization of ferroelectric material

Process for producing a semiconductor device having hemispherical grains (HSG)

Semiconductor device and manufacturing method thereof

Semiconductor device, production method and production device thereof

Semiconductor device

Nonvolatile semiconductor storage unit and production method therefor

FUJIKURA LTD

Optical-fiber cable and method of manufacturing the same

Optical fiber and optical fiber cable using the same

Optical fiber and optical fiber cable having a first jacket layer and a second jacket layer and a coefficient of thermal expansion selecting method

Printed wiring board

Printed wiring board

Optical fiber drop cable

Differential signal transmission circuit and method for manufacturing same

WATANABE HIROHITO

Flexible printed circuit and method of manufacturing same

Flexible printed board and method of manufacturing same

Printed circuit board and method for manufacturing the same

Method for manufacturing printed wiring board

OUCHI YASUHIRO

Socket contact terminal and semiconductor device

NEC ELECTRONICS CORP

Semiconductor device having high dielectric constant layers of different thicknesses

OGAWA TAIJI

Printed wiring board including first and second insulating layers having dielectric loss tangents that are different by a predetermined relationship

INABA MASATOSHI

Method of manufacturing printed circuit board and printed circuit board