Inventor

OKAZAWA TAKESHI

JP27 patents

⚠️ This page may combine multiple inventors who share the name “OKAZAWA TAKESHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OKAZAWA TAKESHI

NEC CORP

Method of manufacturing semiconductor device having polycrystalline silicon layer with metal silicide film

Nonvolatile magnetic storage device

Non-volatile semiconductor memory device with magnetic memory cell array

Flash memory including improved transistor cells and a method of programming the memory

Method of erasing data stored in flash type nonvolatile memory cell

Non-volatile memory device

Nonvolatile semiconductor memory device and manufacturing method of the same

Floating gate type erasable and programmable read only memory cell, method of making the same, and electrically erasing and writing method

Flash electrically erasable and programmable ROM

Method of fabricating programmable read only memory device having trench isolation structure

Semiconductor device having an improved thin film transistor

Semiconductor integrated circuit device of high degree of integration

Method of manufacturing a semiconductor device having a polycrystalline silicon layer

Non-volatile semiconductor memory device having a memory cell group operative as a redundant memory cell group for replacement of another group

Electrically erasable programmable non-volatile semiconductor memory device and method for manufacturing the same

Nonvolatile memory device with compensation for over-erasing operation

Nonvolatile semiconductor memory device and manufacturing method of the same

Non-volatile semiconductor memory device with thin insulation layer below erase gate

Stacked metal-insulator semiconductor device

NEC ELECTRONICS CORP

Method of fabricating magnetic random access memory operating based on tunnel magnetroresistance effect

Magnetic memory device having XP cell and Str cell in one chip

Magnetic memory and method of operation thereof

Method of forming magnetic memory

Magnetic memory and method of its manufacture

MRAM and data writing method therefor

Nonvolatile storage device and operating method thereof

Nonvolatile memory device having data read operation with using reference cell and method thereof