Inventor
RA KYEONG-MAN
KR15 patents
⚠️ This page may combine multiple inventors who share the name “RA KYEONG-MAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LG SEMICON CO LTD
10 patentsUS6121072ASep 19, 2000
Method of fabricating nonvolatile memory device
LG SEMICON CO LTD43 citations92
US5859454AJan 12, 1999
Nonvolatile memory device
LG SEMICON CO LTD20 citations92
US5751632AMay 12, 1998
Device for and method of sensing data of multi-bit memory cell
LG SEMICON CO LTD21 citations88
US6335553B1Jan 1, 2002
Nonvolatile semiconductor memory and method of fabrication
LG SEMICON CO LTD6 citations73
US6335243B1Jan 1, 2002
Method of fabricating nonvolatile memory device
LG SEMICON CO LTD11 citations73
US6037226AMar 14, 2000
Method of making contactless nonvolatile semiconductor memory with asymmetrical floating gate
LG SEMICON CO LTD15 citations73
US6038175AMar 14, 2000
Erase verifying apparatus in serial flash memory having redundancy and method thereof
LG SEMICON CO LTD8 citations73
US5998829ADec 7, 1999
Non-volatile memory device incorporating a dual channel structure
LG SEMICON CO LTD12 citations73
US5777359AJul 7, 1998
Semiconductor flash memory device and fabrication method of same
LG SEMICON CO LTD12 citations73
US6087223AJul 11, 2000
Method of fabricating flash memory with dissymmetrical floating gate
LG SEMICON CO LTD3 citations62
HYUNDAI ELECTRONICS IND
5 patentsUS6278634B1Aug 21, 2001
Reference memory cell initialization circuit and method
HYUNDAI ELECTRONICS IND28 citations92
US6269022B1Jul 31, 2001
Threshold voltage setting circuit for reference memory cell and method for setting threshold voltage using the same
HYUNDAI ELECTRONICS IND29 citations92
US6480018B2Nov 12, 2002
Charge gain stress test circuit for nonvolatile memory and test method using the same
HYUNDAI ELECTRONICS IND9 citations73
US6323671B1Nov 27, 2001
Charge gain stress test circuit for nonvolatile memory and test method using the same
HYUNDAI ELECTRONICS IND8 citations73
US6146943ANov 14, 2000
Method for fabricating nonvolatile memory device
HYUNDAI ELECTRONICS IND0 citations41