Inventor
YAMASHITA YUICHIRO
JP158 patents
⚠️ This page may combine multiple inventors who share the name “YAMASHITA YUICHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CANON KK
21 patentsUS7928477B2Apr 19, 2011
Solid-state imaging apparatus
CANON KK77 citations98
US7817199B2Oct 19, 2010
Photoelectric conversion apparatus, control method thereof, imaging apparatus, and imaging system
CANON KK68 citations98
US7633539B2Dec 15, 2009
Image pickup device with analog-to-digital converter
CANON KK51 citations98
US6750437B2Jun 15, 2004
Image pickup apparatus that suitably adjusts a focus
CANON KK61 citations96
US6518910B2Feb 11, 2003
Signal processing apparatus having an analog/digital conversion function
CANON KK68 citations96
US9419038B2Aug 16, 2016
Photoelectric conversion apparatus and imaging system using the same
CANON KK23 citations93
US8723232B2May 13, 2014
Solid-state imaging apparatus
CANON KK22 citations93
US8357956B2Jan 22, 2013
Solid-state imaging apparatus
CANON KK31 citations93
US7623056B2Nov 24, 2009
Photoelectric conversion apparatus
CANON KK44 citations93
US8913168B2Dec 16, 2014
Solid-state image sensor and image sensing apparatus
CANON KK30 citations92
US7456882B1Nov 25, 2008
Image pickup device
CANON KK20 citations92
US11114487B2Sep 7, 2021
Photoelectric conversion apparatus and imaging system using the same
CANON KK3 citations84
US10727266B2Jul 28, 2020
Photoelectric conversion apparatus and imaging system using the same
CANON KK3 citations84
US10636828B2Apr 28, 2020
Photoelectric conversion apparatus and imaging system using the same
CANON KK3 citations84
US10283546B2May 7, 2019
Photoelectric conversion apparatus and imaging system using the same
CANON KK6 citations84
US9893104B2Feb 13, 2018
Solid-state image pickup apparatus, and image pickup system using solid-state image pickup apparatus
CANON KK5 citations84
US9773827B2Sep 26, 2017
Solid-state image sensor and camera where the plurality of pixels form a pixel group under a single microlens
CANON KK7 citations84
US9300884B2Mar 29, 2016
Solid-state image sensor and camera having a plurality of photoelectric converters under a microlens
CANON KK6 citations84
US9053996B2Jun 9, 2015
Solid-state imaging apparatus with a plurality of processing portions
CANON KK17 citations84
US8742359B2Jun 3, 2014
Solid-state imaging apparatus and imaging system
CANON KK10 citations84
US8736005B2May 27, 2014
Photoelectric conversion device and imaging system
CANON KK9 citations84
TAIWAN SEMICONDUCTOR MFG CO LTD
14 patentsUS10204950B1Feb 12, 2019
SPAD image sensor and associated fabricating method
TAIWAN SEMICONDUCTOR MFG CO LTD69 citations98
US9923013B1Mar 20, 2018
Sensor device, image sensor array and manufacturing method of sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD32 citations94
US9437645B1Sep 6, 2016
Composite grid structure to reduce cross talk in back side illumination image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD27 citations94
US11227889B2Jan 18, 2022
Extra doped region for back-side deep trench isolation
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10672934B2Jun 2, 2020
SPAD image sensor and associated fabricating method
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10276618B2Apr 30, 2019
Extra doped region for back-side deep trench isolation
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10205037B2Feb 12, 2019
Photodiode device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10177187B2Jan 8, 2019
Implant damage free image sensor and method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10002899B2Jun 19, 2018
Microlens for a phase detection auto focus (PDAF) pixel of a composite grid structure
TAIWAN SEMICONDUCTOR MFG CO LTD15 citations84
US9954022B2Apr 24, 2018
Extra doped region for back-side deep trench isolation
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9659987B2May 23, 2017
Approach for reducing pixel pitch using vertical transfer gates and implant isolation regions
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9620548B1Apr 11, 2017
Image sensor with wide contact
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations84
US9613994B2Apr 4, 2017
Capacitance device in a stacked scheme and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9564468B2Feb 7, 2017
Composite grid structure to reduce crosstalk in back side illumination image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
YAMASHITA YUICHIRO
6 patentsUS8456559B2Jun 4, 2013
Solid-state imaging apparatus and driving method thereof
YAMASHITA YUICHIRO77 citations98
US8779544B2Jul 15, 2014
Photoelectric conversion apparatus and imaging system having revision with multiple impurity densities
YAMASHITA YUICHIRO23 citations93
US8427564B2Apr 23, 2013
Driving method for solid-state imaging apparatus, and image system
YAMASHITA YUICHIRO32 citations93
US8169498B2May 1, 2012
Nonlinear error correction processor for an image sensor
YAMASHITA YUICHIRO20 citations93
US8836833B2Sep 16, 2014
Solid-state imaging apparatus having pixels with plural semiconductor regions
YAMASHITA YUICHIRO26 citations92
US8675107B2Mar 18, 2014
Photoelectric conversion apparatus, control method thereof, imaging apparatus, and imaging system
YAMASHITA YUICHIRO11 citations84
KOBAYASHI MASAHIRO
2 patentsONUKI YUSUKE
2 patentsKONO SHOJI
1 patentKIKUCHI SHIN
1 patentARISHIMA YU
1 patentTADAHIRO OHMI AND TADASHI SHIB
1 patentTAIWAN SEMICONDUCTOR MFG
1 patentShowing the top 50 of 158 patents by PatentIndex Score.