Inventor

KHOURI OSAMA

IT35 patents

⚠️ This page may combine multiple inventors who share the name “KHOURI OSAMA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KHOURI OSAMA

ST MICROELECTRONICS SRL

Capacitive compensation circuit for the regulation of the word line reading voltage in non-volatile memories

Capacitive boosting circuit for the regulation of the word line reading voltage in non-volatile memories

Single supply voltage, nonvolatile phase change memory device with cascoded column selection and simultaneous word read/write operations

Architecture of a phase-change nonvolatile memory array

Method for programming nonvolatile memory cells with program and verify algorithm using a staircase voltage with varying step amplitude

Programmable voltage generator

Low power charge pump circuit

Method of writing to a phase change memory device

Charge pump circuit with a brief settling time and high output voltage regulation precision

Analog-to-digital conversion method and device, in high-density multilevel non-volatile memory devices

Reading circuit for semiconductor non-volatile memories

Control circuit for a variable-voltage regulator of a nonvolatile memory with hierarchical row decoding

Circuit device for performing hierarchic row decoding in non-volatile memory devices

Voltage generator switching between alternating, first and second voltage values, in particular for programming multilevel cells

Voltage regulating circuit for a capacitive load

Voltage regulator for low-consumption circuits

Small size, low consumption, multilevel nonvolatile memory

Single supply voltage nonvolatile memory device with row decoding

Page buffer for a programmable memory device

Non volatile memory device including a predetermined number of sectors

Voltage booster with a low output resistance

Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof

Electronic memory device having high density non-volatile memory cells and a reduced capacitive interference cell-to-cell

OVONYX INC

Phase change memory device

Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof

Circuit and method for temperature tracing of devices including an element of chalcogenic material, in particular phase change memory devices

KHOURI OSAMA

Method of programming selection transistors for NAND flash memory

Method of transferring data in an electrically programmable memory

Electronic memory device having high integration density non-volatile memory cells and a reduced capacitive coupling

SK HYNIX INC

NAND flash memory comprising a current sensing page buffer preventing voltage from discharging from a node during operation

PASSERINI MARCO

Method and circuit to discharge bit lines after an erase pulse

MINA DIEGO DELLA

Systems and methods for erasing charge-trap flash memory

EM MICROELECTRONIC MARIN SA

Method and system for reading unknown data from non-volatile memory

VIMERCATI DANIELE

Distribution of an electric quantity through a circuit

PS4 LUXCO SARL

Semiconductor device, data programming device, and method for improving the recovery of bit lines of unselected memory cells for programming operation