Inventor
KIM NAM-JONG
KR29 patents
⚠️ This page may combine multiple inventors who share the name “KIM NAM-JONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
23 patentsUS6154417ANov 28, 2000
Integrated circuit memory devices having synchronous wave pipelining capability and methods of operating same
SAMSUNG ELECTRONICS CO LTD76 citations96
US7505353B2Mar 17, 2009
Multi-port semiconductor memory device having variable access paths and method
SAMSUNG ELECTRONICS CO LTD18 citations92
US7315792B2Jan 1, 2008
Temperature detector providing multiple detected temperature points using single branch and method of detecting shifted temperature
SAMSUNG ELECTRONICS CO LTD23 citations92
US6249483B1Jun 19, 2001
Semiconductor memory device having a circuit for latching data from a data line of a data output path and a related data latching method
SAMSUNG ELECTRONICS CO LTD23 citations92
US7349278B2Mar 25, 2008
DRAM and method for partially refreshing memory cell array
SAMSUNG ELECTRONICS CO LTD13 citations84
US7317335B2Jan 8, 2008
Level shifter with low leakage current
SAMSUNG ELECTRONICS CO LTD17 citations84
US7295050B2Nov 13, 2007
Power-up reset circuit with reduced power consumption
SAMSUNG ELECTRONICS CO LTD14 citations84
US7248075B2Jul 24, 2007
Level shifter with low leakage current
SAMSUNG ELECTRONICS CO LTD16 citations84
US7135913B2Nov 14, 2006
Reference voltage generating circuit for integrated circuit
SAMSUNG ELECTRONICS CO LTD14 citations84
US6536002B1Mar 18, 2003
Buffered redundancy circuits for integrated circuit memory devices
SAMSUNG ELECTRONICS CO LTD18 citations84
US6421797B1Jul 16, 2002
Integrated circuit memory devices and methods for generating multiple parallel bit memory test results per clock cycle
SAMSUNG ELECTRONICS CO LTD14 citations84
US7560976B2Jul 14, 2009
Method of operating a semiconductor device and the semiconductor device
SAMSUNG ELECTRONICS CO LTD11 citations82
US7499364B2Mar 3, 2009
Multi-port semiconductor memory device and signal input/output method therefor
SAMSUNG ELECTRONICS CO LTD9 citations82
US7203097B2Apr 10, 2007
Method of operating a semiconductor device and the semiconductor device
SAMSUNG ELECTRONICS CO LTD11 citations82
US6005825ADec 21, 1999
Synchronous semiconductor memory device having wave pipelining control structure and method for outputting data using the same
SAMSUNG ELECTRONICS CO LTD9 citations74
US7317651B2Jan 8, 2008
Anti-fuse circuit and anti-fusing method
SAMSUNG ELECTRONICS CO LTD7 citations73
US7394711B2Jul 1, 2008
Multi-port semiconductor memory device and method for accessing and refreshing the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7339843B2Mar 4, 2008
Methods and circuits for programming addresses of failed memory cells in a memory device
SAMSUNG ELECTRONICS CO LTD3 citations63
US7330384B2Feb 12, 2008
Verifying circuit and method of repairing semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7116591B2Oct 3, 2006
Redundancy circuits and memory devices having a twist bitline scheme and methods of repairing defective cells in the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US10985139B2Apr 20, 2021
Semiconductor chip for sensing temperature and semiconductor system including the same
SAMSUNG ELECTRONICS CO LTD1 citations60
US7408826B2Aug 5, 2008
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US6323702B1Nov 27, 2001
Integrated circuit devices having circuits therein for driving large signal line loads
SAMSUNG ELECTRONICS CO LTD0 citations52