Inventor

TADA GEN

JP21 patents

⚠️ This page may combine multiple inventors who share the name “TADA GEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TADA GEN

FUJI ELECTRIC CO LTD

Method of producing a semiconductor device having two MIS transistor circuits

CMOS structure with varying gate oxide thickness and with both different and like conductivity-type gate electrodes

High voltage MIS transistor and semiconductor device

High withstand voltage M I S field effect transistor and semiconductor integrated circuit

MIS semiconductor device with low on resistance and high breakdown voltage

High voltage integrated circuit

Semiconductor device with limiter diode

Insulated-gate semiconductor field effect transistor which operates with a low gate voltage and high drain and source voltages

Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same

Lateral high voltage semiconductor device with protective silicon nitride film in voltage withstanding region

High withstand voltage semiconductor device

Semiconductor apparatus and method for manufacturing the same

Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same

Lateral high breakdown voltage MOSFET and device provided therewith

Lateral high breakdown voltage MOSFET and device provided therewith

FUJI ELEC DEVICE TECH CO LTD

Semiconductor circuit, inverter circuit, semiconductor apparatus, and manufacturing method thereof

Display device driver circuit

Semiconductor integrated circuit for driving the address of a display device

FUJI ELECTRIC HOLDINGS

Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same

FUJI ELECTRIC SYSTEMS CO LTD

Drive device

OGA TAKUYA

Semiconductor device