Inventor
KITAMURA AKIO
JP55 patents
⚠️ This page may combine multiple inventors who share the name “KITAMURA AKIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJI ELECTRIC CO LTD
38 patentsUS5844275ADec 1, 1998
High withstand-voltage lateral MOSFET with a trench and method of producing the same
FUJI ELECTRIC CO LTD139 citations98
US5760440AJun 2, 1998
Back-source MOSFET
FUJI ELECTRIC CO LTD118 citations98
US5701026ADec 23, 1997
Lateral trench MISFET
FUJI ELECTRIC CO LTD101 citations98
US5885878AMar 23, 1999
Lateral trench MISFET and method of manufacturing the same
FUJI ELECTRIC CO LTD49 citations96
US5436486AJul 25, 1995
High voltage MIS transistor and semiconductor device
FUJI ELECTRIC CO LTD59 citations96
US5432370AJul 11, 1995
High withstand voltage M I S field effect transistor and semiconductor integrated circuit
FUJI ELECTRIC CO LTD54 citations96
US6075276AJun 13, 2000
ESD protection device using Zener diodes
FUJI ELECTRIC CO LTD26 citations93
US5981997ANov 9, 1999
Horizontal field effect transistor and method of manufacturing the same
FUJI ELECTRIC CO LTD41 citations93
US5917217AJun 29, 1999
Lateral field effect transistor and method of manufacturing the same
FUJI ELECTRIC CO LTD20 citations93
US5705842AJan 6, 1998
Horizontal MOSFET
FUJI ELECTRIC CO LTD21 citations93
US5523599AJun 4, 1996
High voltage MIS field effect transistor
FUJI ELECTRIC CO LTD24 citations93
US7274543B2Sep 25, 2007
Over-voltage protection circuit
FUJI ELECTRIC CO LTD29 citations92
US6525390B2Feb 25, 2003
MIS semiconductor device with low on resistance and high breakdown voltage
FUJI ELECTRIC CO LTD49 citations92
US5591657AJan 7, 1997
Semiconductor apparatus manufacturing method employing gate side wall self-aligning for masking
FUJI ELECTRIC CO LTD35 citations92
US9362118B2Jun 7, 2016
Semiconductor device and manufacturing method thereof
FUJI ELECTRIC CO LTD8 citations84
US9129892B2Sep 8, 2015
Semiconductor device and manufacturing method thereof
FUJI ELECTRIC CO LTD8 citations84
US8847305B2Sep 30, 2014
Semiconductor device and manufacturing method thereof
FUJI ELECTRIC CO LTD11 citations84
US6998680B2Feb 14, 2006
Semiconductor device
FUJI ELECTRIC CO LTD15 citations84
US6861702B2Mar 1, 2005
Semiconductor device
FUJI ELECTRIC CO LTD18 citations84
US7049202B2May 23, 2006
Method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD5 citations74
US6853034B2Feb 8, 2005
Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same
FUJI ELECTRIC CO LTD6 citations74
US5633525AMay 27, 1997
Lateral field effect transistor
FUJI ELECTRIC CO LTD17 citations74
US10756001B2Aug 25, 2020
Semiconductor module
FUJI ELECTRIC CO LTD2 citations71
US6316794B1Nov 13, 2001
Lateral high voltage semiconductor device with protective silicon nitride film in voltage withstanding region
FUJI ELECTRIC CO LTD6 citations71
US10128345B2Nov 13, 2018
Semiconductor device
FUJI ELECTRIC CO LTD2 citations70
US7138311B2Nov 21, 2006
Semiconductor integrated circuit device and manufacture method therefore
FUJI ELECTRIC CO LTD2 citations63
US6833594B2Dec 21, 2004
Semiconductor integrated circuit device and manufacture method therefore
FUJI ELECTRIC CO LTD4 citations63
US6809376B2Oct 26, 2004
Semiconductor integrated circuit device and manufacture method therefore
FUJI ELECTRIC CO LTD2 citations63
US6740952B2May 25, 2004
High withstand voltage semiconductor device
FUJI ELECTRIC CO LTD5 citations63
US6730961B2May 4, 2004
Semiconductor device
FUJI ELECTRIC CO LTD4 citations63
US6639287B2Oct 28, 2003
Semiconductor integrated circuit device
FUJI ELECTRIC CO LTD2 citations63
US6570237B2May 27, 2003
Semiconductor device with a protective diode having a high breakdown voltage
FUJI ELECTRIC CO LTD2 citations63
US6459101B1Oct 1, 2002
Semiconductor device
FUJI ELECTRIC CO LTD5 citations63
US5502323AMar 26, 1996
Lateral type field effect transistor
FUJI ELECTRIC CO LTD5 citations63
US9411346B2Aug 9, 2016
Integrated circuit and semiconductor device
FUJI ELECTRIC CO LTD2 citations62
US5461259AOct 24, 1995
High-current integrated circuit
FUJI ELECTRIC CO LTD5 citations62
US6558983B2May 6, 2003
Semiconductor apparatus and method for manufacturing the same
FUJI ELECTRIC CO LTD3 citations60
US7195980B2Mar 27, 2007
Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same
FUJI ELECTRIC CO LTD0 citations52
TAKARA CO LTD
4 patentsFUJI ELECTRIC HOLDINGS
2 patentsYAMAJI MASAHARU
2 patents(unassigned)
1 patentMITSUI CYANAMID KK
1 patentFUJI ELECTRONIC CO LTD
1 patentGIKEN LTD
1 patentShowing the top 50 of 55 patents by PatentIndex Score.