P

Inventor

KITAMURA AKIO

JP55 patents
⚠️ This page may combine multiple inventors who share the name “KITAMURA AKIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FUJI ELECTRIC CO LTD

38 patents
US5844275ADec 1, 1998

High withstand-voltage lateral MOSFET with a trench and method of producing the same

FUJI ELECTRIC CO LTD139 citations98
US5760440AJun 2, 1998

Back-source MOSFET

FUJI ELECTRIC CO LTD118 citations98
US5701026ADec 23, 1997

Lateral trench MISFET

FUJI ELECTRIC CO LTD101 citations98
US5885878AMar 23, 1999

Lateral trench MISFET and method of manufacturing the same

FUJI ELECTRIC CO LTD49 citations96
US5436486AJul 25, 1995

High voltage MIS transistor and semiconductor device

FUJI ELECTRIC CO LTD59 citations96
US5432370AJul 11, 1995

High withstand voltage M I S field effect transistor and semiconductor integrated circuit

FUJI ELECTRIC CO LTD54 citations96
US6075276AJun 13, 2000

ESD protection device using Zener diodes

FUJI ELECTRIC CO LTD26 citations93
US5981997ANov 9, 1999

Horizontal field effect transistor and method of manufacturing the same

FUJI ELECTRIC CO LTD41 citations93
US5917217AJun 29, 1999

Lateral field effect transistor and method of manufacturing the same

FUJI ELECTRIC CO LTD20 citations93
US5705842AJan 6, 1998

Horizontal MOSFET

FUJI ELECTRIC CO LTD21 citations93
US5523599AJun 4, 1996

High voltage MIS field effect transistor

FUJI ELECTRIC CO LTD24 citations93
US7274543B2Sep 25, 2007

Over-voltage protection circuit

FUJI ELECTRIC CO LTD29 citations92
US6525390B2Feb 25, 2003

MIS semiconductor device with low on resistance and high breakdown voltage

FUJI ELECTRIC CO LTD49 citations92
US5591657AJan 7, 1997

Semiconductor apparatus manufacturing method employing gate side wall self-aligning for masking

FUJI ELECTRIC CO LTD35 citations92
US9362118B2Jun 7, 2016

Semiconductor device and manufacturing method thereof

FUJI ELECTRIC CO LTD8 citations84
US9129892B2Sep 8, 2015

Semiconductor device and manufacturing method thereof

FUJI ELECTRIC CO LTD8 citations84
US8847305B2Sep 30, 2014

Semiconductor device and manufacturing method thereof

FUJI ELECTRIC CO LTD11 citations84
US6998680B2Feb 14, 2006

Semiconductor device

FUJI ELECTRIC CO LTD15 citations84
US6861702B2Mar 1, 2005

Semiconductor device

FUJI ELECTRIC CO LTD18 citations84
US7049202B2May 23, 2006

Method of manufacturing semiconductor device

FUJI ELECTRIC CO LTD5 citations74
US6853034B2Feb 8, 2005

Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same

FUJI ELECTRIC CO LTD6 citations74
US5633525AMay 27, 1997

Lateral field effect transistor

FUJI ELECTRIC CO LTD17 citations74
US10756001B2Aug 25, 2020

Semiconductor module

FUJI ELECTRIC CO LTD2 citations71
US6316794B1Nov 13, 2001

Lateral high voltage semiconductor device with protective silicon nitride film in voltage withstanding region

FUJI ELECTRIC CO LTD6 citations71
US10128345B2Nov 13, 2018

Semiconductor device

FUJI ELECTRIC CO LTD2 citations70
US7138311B2Nov 21, 2006

Semiconductor integrated circuit device and manufacture method therefore

FUJI ELECTRIC CO LTD2 citations63
US6833594B2Dec 21, 2004

Semiconductor integrated circuit device and manufacture method therefore

FUJI ELECTRIC CO LTD4 citations63
US6809376B2Oct 26, 2004

Semiconductor integrated circuit device and manufacture method therefore

FUJI ELECTRIC CO LTD2 citations63
US6740952B2May 25, 2004

High withstand voltage semiconductor device

FUJI ELECTRIC CO LTD5 citations63
US6730961B2May 4, 2004

Semiconductor device

FUJI ELECTRIC CO LTD4 citations63
US6639287B2Oct 28, 2003

Semiconductor integrated circuit device

FUJI ELECTRIC CO LTD2 citations63
US6570237B2May 27, 2003

Semiconductor device with a protective diode having a high breakdown voltage

FUJI ELECTRIC CO LTD2 citations63
US6459101B1Oct 1, 2002

Semiconductor device

FUJI ELECTRIC CO LTD5 citations63
US5502323AMar 26, 1996

Lateral type field effect transistor

FUJI ELECTRIC CO LTD5 citations63
US9411346B2Aug 9, 2016

Integrated circuit and semiconductor device

FUJI ELECTRIC CO LTD2 citations62
US5461259AOct 24, 1995

High-current integrated circuit

FUJI ELECTRIC CO LTD5 citations62
US6558983B2May 6, 2003

Semiconductor apparatus and method for manufacturing the same

FUJI ELECTRIC CO LTD3 citations60
US7195980B2Mar 27, 2007

Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same

FUJI ELECTRIC CO LTD0 citations52

TAKARA CO LTD

4 patents

FUJI ELECTRIC HOLDINGS

2 patents

YAMAJI MASAHARU

2 patents

(unassigned)

1 patent

MITSUI CYANAMID KK

1 patent

FUJI ELECTRONIC CO LTD

1 patent

GIKEN LTD

1 patent

Showing the top 50 of 55 patents by PatentIndex Score.