Inventor

FUJISHIMA NAOTO

JP51 patents

⚠️ This page may combine multiple inventors who share the name “FUJISHIMA NAOTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FUJISHIMA NAOTO

FUJI ELECTRIC CO LTD

Method of manufacturing vertical trench misfet

Vertical trench misfet and method of manufacturing the same

High withstand-voltage lateral MOSFET with a trench and method of producing the same

Back-source MOSFET

Lateral trench MISFET

Semiconductor integrated circuit device and method of manufacturing the same

Trench-type MOSFET having a reduced device pitch and on-resistance

Lateral trench MISFET and method of manufacturing the same

Lateral semiconductor arrangement for power ICS

High voltage MIS transistor and semiconductor device

High withstand voltage M I S field effect transistor and semiconductor integrated circuit

Semiconductor device and a method for manufacturing same

Lateral semiconductor arrangement for power IGS

Lateral field effect transistor and method of manufacturing the same

Horizontal MOSFET

High voltage MIS field effect transistor

MIS semiconductor device with low on resistance and high breakdown voltage

Method of manufacturing a semiconductor device using gate side wall as mask for self-alignment

Semiconductor device with limiter diode

Semiconductor apparatus manufacturing method employing gate side wall self-aligning for masking

Semiconductor device and its manufacturing method

Semiconductor device

Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same

Lateral field effect transistor

High-current integrated circuit with wiring for minimized on-resistance

Semiconductor with a conductivity modulating-type MISFET

Semiconductor integrated circuit

Semiconductor device with integrated trench lateral power MOSFETs and planar devices

Semiconductor device and a method for manufacturing same

High withstand voltage semiconductor device

Semiconductor device

Lateral type field effect transistor

Semiconductor device, battery protection circuit and battery pack

Method of manufacturing a semiconductor integrated circuit device

Method of manufacturing a semiconductor integrated circuit device

Trench lateral power MOSFET and a method of manufacturing the same

Trench lateral power MOSFET and a method of manufacturing the same

Method of manufacturing a semiconductor integrated circuit device

Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same

FUJI ELEC DEVICE TECH CO LTD

SOI lateral semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the device

Manufacturing method of a semiconductor device

(unassigned)

Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same

Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing same

FUJI ELECTRIC SYSTEMS CO LTD

Semiconductor device, battery protection circuit and battery pack

Bidirectional semiconductor device and a manufacturing method thereof

FUJI ELECTRIC HOLDINGS

Semiconductor device

Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same

KITAMURA MUTSUMI

Bidirectional semiconductor device, method of fabricating the same, and semiconductor device incorporating the same

FUJI ELECTRIC CO INC

Trench-type MOSFET having a reduced device pitch and on-resistance