P

Inventor

RABIDOUX PAUL A

US38 patents
⚠️ This page may combine multiple inventors who share the name “RABIDOUX PAUL A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

37 patents
US6440801B1Aug 27, 2002

Structure for folded architecture pillar memory cell

IBM199 citations99
US6114725ASep 5, 2000

Structure for folded architecture pillar memory cell

IBM160 citations99
US6096598AAug 1, 2000

Method for forming pillar memory cells and device formed thereby

IBM200 citations99
US5945707AAug 31, 1999

DRAM cell with grooved transfer device

IBM127 citations99
US6387783B1May 14, 2002

Methods of T-gate fabrication using a hybrid resist

IBM134 citations98
US6221562B1Apr 24, 2001

Resist image reversal by means of spun-on-glass

IBM113 citations98
US6531724B1Mar 11, 2003

Borderless gate structures

IBM37 citations96
US6338934B1Jan 15, 2002

Hybrid resist based on photo acid/photo base blending

IBM126 citations96
US6114082ASep 5, 2000

Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same

IBM81 citations96
US6110653AAug 29, 2000

Acid sensitive ARC and method of use

IBM72 citations96
US6037194AMar 14, 2000

Method for making a DRAM cell with grooved transfer device

IBM82 citations96
US6007968ADec 28, 1999

Method for forming features using frequency doubling hybrid resist and device formed thereby

IBM47 citations96
US6372412B1Apr 16, 2002

Method of producing an integrated circuit chip using frequency doubling hybrid photoresist and apparatus formed thereby

IBM16 citations93
US6319651B1Nov 20, 2001

Acid sensitive ARC and method of use

IBM36 citations93
US6313492B1Nov 6, 2001

Integrated circuit chip produced by using frequency doubling hybrid photoresist

IBM22 citations93
US6303272B1Oct 16, 2001

Process for self-alignment of sub-critical contacts to wiring

IBM50 citations93
US6245488B1Jun 12, 2001

Method for forming features using frequency doubling hybrid resist and device formed thereby

IBM15 citations93
US6210866B1Apr 3, 2001

Method for forming features using self-trimming by selective etch and device formed thereby

IBM22 citations93
US6207514B1Mar 27, 2001

Method for forming borderless gate structures and apparatus formed thereby

IBM46 citations93
US6200726B1Mar 13, 2001

Optimization of space width for hybrid photoresist

IBM33 citations93
US6194268B1Feb 27, 2001

Printing sublithographic images using a shadow mandrel and off-axis exposure

IBM41 citations93
US6184041B1Feb 6, 2001

Fused hybrid resist shapes as a means of modulating hybrid resist space width

IBM36 citations93
US6150256ANov 21, 2000

Method for forming self-aligned features

IBM49 citations93
US6100172AAug 8, 2000

Method for forming a horizontal surface spacer and devices formed thereby

IBM24 citations93
US5956597ASep 21, 1999

Method for producing SOI & non-SOI circuits on a single wafer

IBM28 citations93
US7176089B2Feb 13, 2007

Vertical dual gate field effect transistor

IBM36 citations92
US6798017B2Sep 28, 2004

Vertical dual gate field effect transistor

IBM20 citations92
US6627361B2Sep 30, 2003

Assist features for contact hole mask patterns

IBM29 citations92
US6440635B1Aug 27, 2002

Low “K” factor hybrid photoresist

IBM16 citations92
US6284439B1Sep 4, 2001

Method of producing an integrated circuit chip using low “k” factor hybrid photoresist and apparatus formed thereby

IBM24 citations92
US6190829B1Feb 20, 2001

Low “K” factor hybrid photoresist

IBM24 citations91
US6221704B1Apr 24, 2001

Process for fabricating short channel field effect transistor with a highly conductive gate

IBM19 citations84
US6759315B1Jul 6, 2004

Method for selective trimming of gate structures and apparatus formed thereby

IBM8 citations74
US6277543B1Aug 21, 2001

Method for forming features using frequency doubling hybrid resist and device formed thereby

IBM8 citations74
US6017810AJan 25, 2000

Process for fabricating field effect transistor with a self-aligned gate to device isolation

IBM10 citations74
US6426175B2Jul 30, 2002

Fabrication of a high density long channel DRAM gate with or without a grooved gate

IBM12 citations71
US6815737B2Nov 9, 2004

Method for selective trimming of gate structures and apparatus formed thereby

IBM0 citations52

INTERNAITONAL BUSINESS MACHINE

1 patent