Inventor
MA FEIYUE
US7 patents
Patents
7 patentsUS10256144B2Apr 9, 2019
Process integration approach of selective tungsten via fill
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Process integration approach of selective tungsten via fill
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US10395916B2Aug 27, 2019
In-situ pre-clean for selectivity improvement for selective deposition
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Methods for forming low-resistance contacts through integrated process flow systems
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US10854426B2Dec 1, 2020
Metal recess for semiconductor structures
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US11355391B2Jun 7, 2022
Method for forming a metal gapfill
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US10861676B2Dec 8, 2020
Metal recess for semiconductor structures
APPLIED MATERIALS INC1 citations59