Inventor
NARUKE KIYOMI
JP24 patents
⚠️ This page may combine multiple inventors who share the name “NARUKE KIYOMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
20 patentsUS5838041ANov 17, 1998
Nonvolatile semiconductor memory device having memory cell transistor provided with offset region acting as a charge carrier injecting region
TOSHIBA KK151 citations98
US5465236ANov 7, 1995
Nonvolatile semiconductor memory system with a plurality of erase blocks
TOSHIBA KK49 citations96
US5375094ADec 20, 1994
Nonvolatile semiconductor memory system with a plurality of erase blocks
TOSHIBA KK51 citations96
US6166958ADec 26, 2000
Semiconductor memory device, method for manufacturing the same, and method for controlling the same
TOSHIBA KK52 citations94
US5169792ADec 8, 1992
Semiconductor device
TOSHIBA KK55 citations93
US5091882AFeb 25, 1992
Nonvolatile semiconductor memory device and method of operating the same
TOSHIBA KK34 citations92
US5068827ANov 26, 1991
Method of applying a program voltage for a non-volatile semiconductor memory and apparatus for implementing the same
TOSHIBA KK44 citations92
US5452248ASep 19, 1995
Method of operating a nonvolatile semiconductor memory device
TOSHIBA KK24 citations91
US5885872AMar 23, 1999
Method for manufacturing a semiconductor device having an adjustable channel width
TOSHIBA KK21 citations89
US7094652B2Aug 22, 2006
Semiconductor device and method of manufacturing the same
TOSHIBA KK13 citations84
US6806540B2Oct 19, 2004
Semiconductor device and method of manufacturing the same
TOSHIBA KK14 citations84
US7215576B2May 8, 2007
Nonvolatile semiconductor memory device which erases data in units of one block including a number of memory cells, and data erasing method of the nonvolatile semiconductor memory device
TOSHIBA KK7 citations74
US5365098ANov 15, 1994
Non-volatile semiconductor memory having improved erasure characteristics
TOSHIBA KK14 citations74
US5243210ASep 7, 1993
Semiconductor memory device and manufacturing method thereof
TOSHIBA KK18 citations74
US5208173AMay 4, 1993
Method of manufacturing non-volatile semiconductor memory device
TOSHIBA KK11 citations74
US4675981AJun 30, 1987
Method of making implanted device regions in a semiconductor using a master mask member
TOSHIBA KK20 citations74
US5751636AMay 12, 1998
Semiconductor memory device having data erasing mechanism
TOSHIBA KK10 citations72
US5629548AMay 13, 1997
Semiconductor device with adjustable channel width
TOSHIBA KK8 citations70
US5623445AApr 22, 1997
Semiconductor memory device having data erasing mechanism
TOSHIBA KK1 citations61
US6376295B1Apr 23, 2002
Method for manufacturing a semiconductor memory device with a fine structure
TOSHIBA KK3 citations57