P

Inventor

JOSHI VIKRAM

US74 patents
⚠️ This page may combine multiple inventors who share the name “JOSHI VIKRAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SYMETRIX CORP

23 patents
US6370056B1Apr 9, 2002

Ferroelectric memory and method of operating same

SYMETRIX CORP88 citations98
US7075134B2Jul 11, 2006

Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same

SYMETRIX CORP57 citations96
US6781184B2Aug 24, 2004

Barrier layers for protecting metal oxides from hydrogen degradation

SYMETRIX CORP48 citations96
US6495878B1Dec 17, 2002

Interlayer oxide containing thin films for high dielectric constant application

SYMETRIX CORP64 citations96
US6104049AAug 15, 2000

Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same

SYMETRIX CORP53 citations96
US5853500ADec 29, 1998

Method for fabricating thin films of barium strontium titanate without exposure to oxygen at high temperatures

SYMETRIX CORP54 citations96
US5962069AOct 5, 1999

Process for fabricating layered superlattice materials and AB03 type metal oxides without exposure to oxygen at high temperatures

SYMETRIX CORP52 citations95
US6559469B1May 6, 2003

Ferroelectric and high dielectric constant transistors

SYMETRIX CORP28 citations93
US6541279B2Apr 1, 2003

Method for forming an integrated circuit

SYMETRIX CORP24 citations93
US6322849B2Nov 27, 2001

Recovery of electronic properties in hydrogen-damaged ferroelectrics by low-temperature annealing in an inert gas

SYMETRIX CORP33 citations93
US6245580B1Jun 12, 2001

Low temperature process for fabricating layered superlattice materials and making electronic devices including same

SYMETRIX CORP21 citations93
US6171934B1Jan 9, 2001

Recovery of electronic properties in process-damaged ferroelectrics by voltage-cycling

SYMETRIX CORP39 citations93
US5811847ASep 22, 1998

PSZT for integrated circuit applications

SYMETRIX CORP20 citations93
US6831313B2Dec 14, 2004

Ferroelectric composite material, method of making same and memory utilizing same

SYMETRIX CORP34 citations92
US6373743B1Apr 16, 2002

Ferroelectric memory and method of operating same

SYMETRIX CORP39 citations92
US6339238B1Jan 15, 2002

Ferroelectric field effect transistor, memory utilizing same, and method of operating same

SYMETRIX CORP36 citations92
US5853889ADec 29, 1998

Materials for electromagnetic wave absorption panels

SYMETRIX CORP32 citations92
US6815223B2Nov 9, 2004

Low thermal budget fabrication of ferroelectric memory using RTP

SYMETRIX CORP16 citations84
US6582972B1Jun 24, 2003

Low temperature oxidizing method of making a layered superlattice material

SYMETRIX CORP13 citations84
US6437380B1Aug 20, 2002

Ferroelectric device with bismuth tantalate capping layer and method of making same

SYMETRIX CORP17 citations84
US6037046AMar 14, 2000

Multi-component electromagnetic wave absorption panels

SYMETRIX CORP18 citations84
US7064374B2Jun 20, 2006

Barrier layers for protecting metal oxides from hydrogen degradation

SYMETRIX CORP7 citations74
US6867452B2Mar 15, 2005

Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7

SYMETRIX CORP7 citations74

JOSHI VIKRAM

6 patents

ORACLE INT CORP

5 patents

SANDISK TECHNOLOGIES LLC

5 patents

NANOMIX INC

4 patents

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

1 patent

XCALAR INC

1 patent

INTELLIGENT IP HOLDINGS 2 LLC

1 patent

FUSION IO INC

1 patent

LONGITUDE ENTPR FLASH S A R L

1 patent

SMITH CHARLES GORDON

1 patent

CAVENDISH KINETICS INC

1 patent

Showing the top 50 of 74 patents by PatentIndex Score.