Inventor
OTSUKI TATSUO
JP21 patents
⚠️ This page may combine multiple inventors who share the name “OTSUKI TATSUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
8 patentsUS6924997B2Aug 2, 2005
Ferroelectric memory and method of operating same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD198 citations99
US6333528B1Dec 25, 2001
Semiconductor device having a capacitor exhibiting improved moisture resistance
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations92
US6169304B1Jan 2, 2001
Semiconductor device having a passivation layer which minimizes diffusion of hydrogen into a dielectric layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations92
US6440754B2Aug 27, 2002
Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations84
US6015987AJan 18, 2000
Semiconductor device having capacitor exhibiting improved mositure resistance and manufacturing method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations82
US6876030B2Apr 5, 2005
Semiconductor memory device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations74
US4712023ADec 8, 1987
Buffered FET logic gate using depletion-mode MESFET's.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations70
USRE38565EAug 17, 2004
Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
SYMETRIX CORP
8 patentsUS5759923AJun 2, 1998
Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits
SYMETRIX CORP102 citations98
US6151241ANov 21, 2000
Ferroelectric memory with disturb protection
SYMETRIX CORP83 citations96
US6104049AAug 15, 2000
Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same
SYMETRIX CORP53 citations96
US6469334B2Oct 22, 2002
Ferroelectric field effect transistor
SYMETRIX CORP20 citations93
US6255121B1Jul 3, 2001
Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor
SYMETRIX CORP27 citations93
US6447838B1Sep 10, 2002
Integrated circuit capacitors with barrier layer and process for making the same
SYMETRIX CORP15 citations84
US6653156B2Nov 25, 2003
Ferroelectric device with capping layer and method of making same
SYMETRIX CORP3 citations63
US6541806B2Apr 1, 2003
Ferroelectric device with capping layer and method of making same
SYMETRIX CORP1 citations52
MATSUSHITA ELECTRONICS CORP
5 patentsUS5624864AApr 29, 1997
Semiconductor device having capacitor and manufacturing method thereof
MATSUSHITA ELECTRONICS CORP71 citations96
US6294438B1Sep 25, 2001
Semiconductor device having capacitor and manufacturing method thereof
MATSUSHITA ELECTRONICS CORP6 citations74
US6265738B1Jul 24, 2001
Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures
MATSUSHITA ELECTRONICS CORP5 citations74
US6107657AAug 22, 2000
Semiconductor device having capacitor and manufacturing method thereof
MATSUSHITA ELECTRONICS CORP6 citations74
US5932281AAug 3, 1999
Method of manufacturing bi-layered ferroelectric thin film
MATSUSHITA ELECTRONICS CORP15 citations70