Inventor
NAKABAYASHI MASASHI
JP22 patents
⚠️ This page may combine multiple inventors who share the name “NAKABAYASHI MASASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NAKABAYASHI MASASHI
6 patentsUS9777403B2Oct 3, 2017
Single-crystal silicon carbide and single-crystal silicon carbide wafer
NAKABAYASHI MASASHI2 citations71
US9068277B2Jun 30, 2015
Apparatus for manufacturing single-crystal silicon carbide
NAKABAYASHI MASASHI2 citations61
US8795624B2Aug 5, 2014
Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
NAKABAYASHI MASASHI1 citations60
US8673254B2Mar 18, 2014
Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
NAKABAYASHI MASASHI3 citations60
US8491719B2Jul 23, 2013
Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same
NAKABAYASHI MASASHI0 citations50
US8178389B2May 15, 2012
Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
NAKABAYASHI MASASHI0 citations50
NIPPON STEEL CORP
5 patentsUS7972704B2Jul 5, 2011
Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom
NIPPON STEEL CORP10 citations83
US6953538B2Oct 11, 2005
Electroconductive low thermal expansion ceramic sintered body
NIPPON STEEL CORP9 citations73
US7794842B2Sep 14, 2010
Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same
NIPPON STEEL CORP2 citations61
US7799305B2Sep 21, 2010
Silicon carbide single crystal and single crystal wafer
NIPPON STEEL CORP0 citations51
US8044408B2Oct 25, 2011
SiC single-crystal substrate and method of producing SiC single-crystal substrate
NIPPON STEEL CORP0 citations49
SHOWA DENKO KK
3 patentsUS11078596B2Aug 3, 2021
Method for evaluating quality of SiC single crystal body and method for producing silicon carbide single crystal ingot using the same
SHOWA DENKO KK4 citations68
US10711369B2Jul 14, 2020
Method for producing silicon carbide single crystal and silicon carbide single crystal substrate
SHOWA DENKO KK1 citations62
US10526722B2Jan 7, 2020
Method for manufacturing silicon carbide single crystal
SHOWA DENKO KK0 citations37
NIPPON STEEL & SUMIKIN MAT CO
3 patentsUS10202706B2Feb 12, 2019
Silicon carbide single crystal wafer and method of manufacturing a silicon carbide single crystal ingot
NIPPON STEEL & SUMIKIN MAT CO2 citations68
US10031089B2Jul 24, 2018
Method for evaluating internal stress of silicon carbide monocrystalline wafer and method for predicting warpage in silicone carbide monocrystalline wafer
NIPPON STEEL & SUMIKIN MAT CO3 citations68
US10048142B2Aug 14, 2018
Evaluation method for bulk silicon carbide single crystals and reference silicon carbide single crystal used in said method
NIPPON STEEL & SUMIKIN MAT CO0 citations51
AIGO TAKASHI
2 patentsUS9691607B2Jun 27, 2017
Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same
AIGO TAKASHI2 citations69
US8901570B2Dec 2, 2014
Epitaxial silicon carbide single crystal substrate and process for producing the same
AIGO TAKASHI5 citations69