Inventor

PARK HEE-SOOK

KR71 patents

⚠️ This page may combine multiple inventors who share the name “PARK HEE-SOOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK HEE-SOOK

SAMSUNG ELECTRONICS CO LTD

Semiconductor device having barrier layer between ruthenium layer and metal layer and method for manufacturing the same

Interlayered dielectric layer of semiconductor device and method of manufacturing the same

Method of forming a semiconductor device having contact using crack-protecting layer

Multi-layered dielectric layer including insulating layer having Si-CH3 bond therein and method for fabricating the same

Semiconductor device

Semiconductor devices including high-k dielectric materials

Methods of forming gate structures for semiconductor devices

Semiconductor device and method of manufacturing the same

Semiconductor integrated circuit device and related method

Semiconductor integrated circuit device and related method

Method of forming a gate of a semiconductor device

Methods of forming a conductive structure in an integrated circuit device

Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layer

Integrated circuit devices having self-aligned contact structures

Method of cleaning a chemical vapor deposition chamber

Semiconductor device and method for fabricating the same

Methods of manufacturing a vertical memory device

Methods of forming recessed gate electrodes having covered layer interfaces

Methods of forming integrated circuit devices having anisotropically-oxidized nitride layers

Semiconductor device including an ohmic layer

Semiconductor devices including gate structures and leakage barrier oxides

Methods for fabricating improved gate dielectrics

Recessed gate electrodes having covered layer interfaces and methods of forming the same

Semiconductor devices having polymetal gate electrodes

Method of forming semiconductor device

Method of forming a semiconductor device including an ohmic layer

Semiconductor device multilayer structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method

Semiconductor device multilayer structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method

Method for forming contact having low resistivity using porous plug and method for forming semiconductor devices using the same

Methods of removing resistive remnants from contact holes using silicidation

SAMSUNG DISPLAY CO LTD

Display device

Display device

Display device

Display device and driving method thereof

Display device and driving method thereof

Display device and driving method thereof

Display device and displaying method thereof

Display device capable of correcting voltage drop and method for driving the same

Display device

Display device and method of driving the same

Display device and driving method thereof

Screen saver controller, display device including the same and method of operating a display device including the same

Screen saver controller, display device including the same and method of operating a display device including the same

Display device and method of driving the same

Display device and power setting method thereof

Display device performing peak luminance driving, and method of operating a display device

Display device performing peak luminance driving, and method of operating a display device

Afterimage compensator and display device having the same

Afterimage compensator and display device having the same

BAEK JONG-MIN

Method of fabricating semiconductor device having buried wiring