Inventor

CHAKRAVARTHI SRINIVASAN

US24 patents

⚠️ This page may combine multiple inventors who share the name “CHAKRAVARTHI SRINIVASAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHAKRAVARTHI SRINIVASAN

TEXAS INSTRUMENTS INC

Forming a retrograde well in a transistor to enhance performance of the transistor

Fabrication of abrupt ultra-shallow junctions

Growth of unfaceted SiGe in MOS transistor fabrication

Methods and apparatus for improved mosfet drain extension activation

Fabrication of abrupt ultra-shallow junctions using angled PAI and fluorine implant

Recess etch for epitaxial SiGe

Semiconductor device fabrication methods for inhibiting carbon out-diffusion in wafers having carbon-containing regions

Integration scheme to improve NMOS with poly cap while mitigating PMOS degradation

Gate edge diode leakage reduction

Phosphorus activated NMOS using SiC process

System and method for improved dopant profiles in CMOS transistors

Fabrication of abrupt ultra-shallow junctions

Forming a retrograde well in a transistor to enhance performance of the transistor

Phosphorus activated NMOS using SiC process

Antimony ion implantation for semiconductor components

Nitrogen based implants for defect reduction in strained silicon

Fabrication of ultra shallow junctions from a solid source with fluorine implantation

Method for manufacturing a transistor device having an improved breakdown voltage and a method for manufacturing an integrated circuit using the same

Interface improvement by stress application during oxide growth through use of backside films

Semiconductor device having optimized shallow junction geometries and method for fabrication thereof

Low stress sacrificial cap layer

Semiconductor doping with improved activation

CHAKRAVARTHI SRINIVASAN

Nitrogen based implants for defect reduction in strained silicon

LU JIONG-PING

Low stress sacrificial cap layer