Inventor
DOAN TRUNG
US14 patents
⚠️ This page may combine multiple inventors who share the name “DOAN TRUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
12 patentsUS5691235ANov 25, 1997
Method of depositing tungsten nitride using a source gas comprising silicon
MICRON TECHNOLOGY INC113 citations98
US5866453AFeb 2, 1999
Etch process for aligning a capacitor structure and an adjacent contact corridor
MICRON TECHNOLOGY INC80 citations96
US6429086B1Aug 6, 2002
Method of depositing tungsten nitride using a source gas comprising silicon
MICRON TECHNOLOGY INC32 citations92
US6235571B1May 22, 2001
Uniform dielectric layer and method to form same
MICRON TECHNOLOGY INC32 citations92
US6274423B1Aug 14, 2001
Etch process for aligning a capacitor structure and an adjacent contact corridor
MICRON TECHNOLOGY INC15 citations84
US6472323B1Oct 29, 2002
Method of depositing tungsten nitride using a source gas comprising silicon
MICRON TECHNOLOGY INC13 citations82
US5073518ADec 17, 1991
Process to mechanically and plastically deform solid ductile metal to fill contacts of conductive channels with ductile metal and process for dry polishing excess metal from a semiconductor wafer
MICRON TECHNOLOGY INC19 citations82
US6730954B2May 4, 2004
Method of depositing tungsten nitride using a source gas comprising silicon
MICRON TECHNOLOGY INC9 citations73
US6653220B2Nov 25, 2003
Advance metallization process
MICRON TECHNOLOGY INC9 citations73
US6281109B1Aug 28, 2001
Advance metallization process
MICRON TECHNOLOGY INC4 citations62
US6066548AMay 23, 2000
Advance metallization process
MICRON TECHNOLOGY INC3 citations62
US6525366B2Feb 25, 2003
Uniform dielectric layer and method to form same
MICRON TECHNOLOGY INC1 citations51