Inventor
LEE KONG HEAN
SG11 patents
Patents
11 patentsUS6228727B1May 8, 2001
Method to form shallow trench isolations with rounded corners and reduced trench oxide recess
CHARTERED SEMICONDUCTOR MFG142 citations97
US6350661B2Feb 26, 2002
Silicon nitride capped shallow trench isolation method for fabricating sub-micron devices with borderless contacts
CHARTERED SEMICONDUCTOR MFG49 citations95
US6265302B1Jul 24, 2001
Partially recessed shallow trench isolation method for fabricating borderless contacts
CHARTERED SEMICONDUCTOR MFG77 citations95
US6165871ADec 26, 2000
Method of making low-leakage architecture for sub-0.18 μm salicided CMOS device
CHARTERED SEMICONDUCTOR MFG55 citations95
US6297126B1Oct 2, 2001
Silicon nitride capped shallow trench isolation method for fabricating sub-micron devices with borderless contacts
CHARTERED SEMICONDUCTOR MFG20 citations92
US5956137ASep 21, 1999
In-line process monitoring using micro-raman spectroscopy
CHARTERED SEMICONDUCTOR MFG31 citations92
US6258676B1Jul 10, 2001
Method for forming a shallow trench isolation using HDP silicon oxynitride
CHARTERED SEMICONDUCTOR MFG37 citations91
US6010954AJan 4, 2000
Cmos gate architecture for integration of salicide process in sub 0.1 . .muM devices
CHARTERED SEMICONDUCTOR MFG41 citations91
US6410429B1Jun 25, 2002
Method for fabricating void-free epitaxial-CoSi2 with ultra-shallow junctions
CHARTERED SEMICONDUCTOR MFG33 citations90
US6649486B1Nov 18, 2003
Method to form shallow trench isolations
CHARTERED SEMICONDUCTOR MFG11 citations71
US6613648B1Sep 2, 2003
Shallow trench isolation using TEOS cap and polysilicon pullback
CHARTERED SEMICONDUCTOR MFG5 citations62