P

Inventor

LEE TAE-JUNG

KR38 patents
⚠️ This page may combine multiple inventors who share the name “LEE TAE-JUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

20 patents
US6573563B2Jun 3, 2003

SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs

SAMSUNG ELECTRONICS CO LTD42 citations93
US6885609B2Apr 26, 2005

Semiconductor memory device supporting two data ports

SAMSUNG ELECTRONICS CO LTD25 citations92
US6797579B2Sep 28, 2004

Semiconductor device having trench isolation structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD21 citations92
US6740933B2May 25, 2004

Semiconductor device having trench isolation structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD21 citations92
US6737706B2May 18, 2004

Silicon on insulator device having trench isolation layer and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD26 citations91
US7593261B2Sep 22, 2009

EEPROM devices and methods of operating and fabricating the same

SAMSUNG ELECTRONICS CO LTD9 citations82
US7120080B2Oct 10, 2006

Dual port semiconductor memory device

SAMSUNG ELECTRONICS CO LTD8 citations74
US6410375B1Jun 25, 2002

Methods of forming transistors including gate dielectric layers having different nitrogen concentrations

SAMSUNG ELECTRONICS CO LTD5 citations74
US7378708B2May 27, 2008

Transistor having a protruded drain

SAMSUNG ELECTRONICS CO LTD6 citations73
US7193271B2Mar 20, 2007

Transistor having a protruded drain

SAMSUNG ELECTRONICS CO LTD5 citations73
US7053443B2May 30, 2006

Cell structure of EPROM device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US6653180B2Nov 25, 2003

Transistors including gate dielectric layers having different nitrogen concentrations and related structures

SAMSUNG ELECTRONICS CO LTD2 citations63
US7419880B2Sep 2, 2008

Transistor having a protruded drain

SAMSUNG ELECTRONICS CO LTD2 citations62
US6995447B2Feb 7, 2006

Silicon on insulator device having trench isolation layer and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations61
US7445992B2Nov 4, 2008

Method for fabricating cell structure of non-volatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations52
US7348241B2Mar 25, 2008

Cell structure of EPROM device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US6995421B2Feb 7, 2006

Cell structure of non-volatile memory device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US8050091B2Nov 1, 2011

EEPROM devices and methods of operating and fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations50
US8987797B2Mar 24, 2015

Nonvolatile memory device and method of forming the same

SAMSUNG ELECTRONICS CO LTD1 citations49
US7330392B2Feb 12, 2008

Dual port semiconductor memory device

SAMSUNG ELECTRONICS CO LTD1 citations46

HYOSUNG CORP

9 patents

KWON OH-KYUM

2 patents

LG CABLE LTD

2 patents

PARK MYOUNG-KYU

1 patent

LS CABLE LTD

1 patent

SAMSUNG ELECRONICS CO LTD

1 patent

BANG KEE-IN

1 patent

CHANG DONG-RYUL

1 patent