Inventor
LEE TAE-JUNG
KR38 patents
⚠️ This page may combine multiple inventors who share the name “LEE TAE-JUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
20 patentsUS6573563B2Jun 3, 2003
SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs
SAMSUNG ELECTRONICS CO LTD42 citations93
US6885609B2Apr 26, 2005
Semiconductor memory device supporting two data ports
SAMSUNG ELECTRONICS CO LTD25 citations92
US6797579B2Sep 28, 2004
Semiconductor device having trench isolation structure and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD21 citations92
US6740933B2May 25, 2004
Semiconductor device having trench isolation structure and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD21 citations92
US6737706B2May 18, 2004
Silicon on insulator device having trench isolation layer and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD26 citations91
US7593261B2Sep 22, 2009
EEPROM devices and methods of operating and fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations82
US7120080B2Oct 10, 2006
Dual port semiconductor memory device
SAMSUNG ELECTRONICS CO LTD8 citations74
US6410375B1Jun 25, 2002
Methods of forming transistors including gate dielectric layers having different nitrogen concentrations
SAMSUNG ELECTRONICS CO LTD5 citations74
US7378708B2May 27, 2008
Transistor having a protruded drain
SAMSUNG ELECTRONICS CO LTD6 citations73
US7193271B2Mar 20, 2007
Transistor having a protruded drain
SAMSUNG ELECTRONICS CO LTD5 citations73
US7053443B2May 30, 2006
Cell structure of EPROM device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US6653180B2Nov 25, 2003
Transistors including gate dielectric layers having different nitrogen concentrations and related structures
SAMSUNG ELECTRONICS CO LTD2 citations63
US7419880B2Sep 2, 2008
Transistor having a protruded drain
SAMSUNG ELECTRONICS CO LTD2 citations62
US6995447B2Feb 7, 2006
Silicon on insulator device having trench isolation layer and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations61
US7445992B2Nov 4, 2008
Method for fabricating cell structure of non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7348241B2Mar 25, 2008
Cell structure of EPROM device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US6995421B2Feb 7, 2006
Cell structure of non-volatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US8050091B2Nov 1, 2011
EEPROM devices and methods of operating and fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations50
US8987797B2Mar 24, 2015
Nonvolatile memory device and method of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations49
US7330392B2Feb 12, 2008
Dual port semiconductor memory device
SAMSUNG ELECTRONICS CO LTD1 citations46
HYOSUNG CORP
9 patentsUS7214727B2May 8, 2007
Solution containing cellulose dissolved in N-methylmorpholine-N-oxide and high tenacity lyocell multifilament using the same
HYOSUNG CORP81 citations96
US6852413B2Feb 8, 2005
Lyocell multi-filament for tire cord and method of producing the same
HYOSUNG CORP20 citations90
US6983779B2Jan 10, 2006
Cellulose dip cord produced from highly homogeneous cellulose solution and tire using the same
HYOSUNG CORP11 citations82
US6902804B2Jun 7, 2005
Lyocell multifilament
HYOSUNG CORP15 citations82
US6812270B2Nov 2, 2004
Process of producing highly homogeneous cellulose solution
HYOSUNG CORP14 citations81
US7097344B2Aug 29, 2006
Homogeneous cellulose solution and high tenacity lyocell multifilament using the same
HYOSUNG CORP10 citations72
US7713459B2May 11, 2010
Cellulose fiber for using as industrial materials
HYOSUNG CORP2 citations61
US7214335B2May 8, 2007
Solution containing cellulose dissolved in N-methylmorpholine-N-oxide and high tenacity lyocell multifilament using the same
HYOSUNG CORP4 citations61
US7732048B2Jun 8, 2010
Cellulose multi-filament
HYOSUNG CORP1 citations51