Inventor

ISHIBASHI KEIJI

JP88 patents

⚠️ This page may combine multiple inventors who share the name “ISHIBASHI KEIJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ISHIBASHI KEIJI

SUMITOMO ELECTRIC INDUSTRIES

Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same

Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same

GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Silicon carbide substrate, semiconductor device, and methods for manufacturing them

Silicon carbide single-crystal substrate and method for manufacturing same

Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device

Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device

Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same

Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same

Nitride semiconductor wafer

Compound semiconductor substrate, semiconductor device, and processes for producing them

Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate

Silicon carbide substrate, semiconductor device, and methods for manufacturing them

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

Substrate, semiconductor device, and method of manufacturing the same

Substrate, semiconductor device, and method of manufacturing the same

III nitride semiconductor substrate, epitaxial substrate, and semiconductor device

Nitride semiconductor light emitting device and method for forming the same

Polishing slurry, method of treating surface of GaxIn1-xAsyP1-y crystal and GaxIn1-xAsyP1-y crystal substrate

Method of measuring warpage of rear surface of substrate

Group III nitride crystal and method for surface treatment thereof, group III nitride stack and manufacturing method thereof, and group III nitride semiconductor device and manufacturing method thereof

Method of producing group 3 nitride substrate wafers and group 3 nitride substrate wafers

EISAI CO LTD

Anthranilic acid derivatives

Fused pyridazine compounds

Fused pyridazine compounds

Butenoic or propenoic acid derivative

Butenoic or propenoic acid derivative

Butenoic or propenoic acid derivative

Butenoic or propenoic acid derivatives

ISHIBASHI KEIJI

Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same

Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same

Nitride semiconductor wafer having a chamfered edge

Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same

Silicon carbide substrate, semiconductor device, and methods for manufacturing them

Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate

Method of processing of nitride semiconductor wafer, nitride semiconductor wafer, method of producing nitride semiconductor device and nitride semiconductor device

ANELVA CORP

Combined RF-DC magnetron sputtering method

Hot element CVD apparatus and a method for removing a deposited film

Method for removing a deposited film

Heating element CVD system and connection structure between heating element and electric power supply mechanism in the heating element CVD system

CANON ANELVA CORP

Epitaxial film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device

Vacuum processing apparatus

NEC CORP

Silicon oxide film formation method

JAPAN GOVERNMENT

Heating element CVD system

INOUE HIROKI

Silicon carbide substrate manufacturing method and silicon carbide substrate

ALMT CORP

Diamond film coated tool and process for producing the same