Inventor

NISHIURA TAKAYUKI

JP24 patents

⚠️ This page may combine multiple inventors who share the name “NISHIURA TAKAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NISHIURA TAKAYUKI

SUMITOMO ELECTRIC INDUSTRIES

Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same

Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same

Nitride semiconductor substrate, and method for working nitride semiconductor substrate

Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device

Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same

GaAs semiconductor substrate for group III-V compound semiconductor device

III-V compound semiconductor substrate manufacturing method

Polishing slurry, method of treating surface of GaxIn1-xAsyP1-y crystal and GaxIn1-xAsyP1-y crystal substrate

Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate

Method of surface treating substrates and method of manufacturing III-V compound semiconductors

Inspection method of compound semiconductor substrate, compound semiconductor substrate, surface treatment method of compound semiconductor substrate, and method of producing compound semiconductor crystal

GaAs semiconductor substrate and fabrication method thereof

Method of packaging compound semiconductor substrates

Group III nitride crystal substrate

Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same

Silicon carbide substrate, silicon carbide semiconductor device, and methods for manufacturing silicon carbide substrate and silicon carbide semiconductor device

Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same

ISHIBASHI KEIJI

Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same

Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing method

HACHIGO AKIHIRO

Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membrane

Production method of compound semiconductor member

MIYAHARA KENICHI

Compound semiconductor substrate

NISHIURA TAKAYUKI

Method of processing a surface of group III nitride crystal and group III nitride crystal substrate

MEZAKI YOSHIO

Method of polishing compound semiconductor substrate, compound semiconductor substrate, method of manufacturing compound semiconductor epitaxial substrate, and compound semiconductor epitaxial substrate