Inventor
LUTZE JEFFREY
US31 patents
⚠️ This page may combine multiple inventors who share the name “LUTZE JEFFREY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK CORP
20 patentsUS7457178B2Nov 25, 2008
Trimming of analog voltages in flash memory devices
SANDISK CORP67 citations98
US7339834B2Mar 4, 2008
Starting program voltage shift with cycling of non-volatile memory
SANDISK CORP71 citations98
US7254071B2Aug 7, 2007
Flash memory devices with trimmed analog voltages
SANDISK CORP61 citations98
US7495956B2Feb 24, 2009
Reducing read disturb for non-volatile storage
SANDISK CORP40 citations96
US7349258B2Mar 25, 2008
Reducing read disturb for non-volatile storage
SANDISK CORP44 citations96
US7295478B2Nov 13, 2007
Selective application of program inhibit schemes in non-volatile memory
SANDISK CORP47 citations96
US7262994B2Aug 28, 2007
System for reducing read disturb for non-volatile storage
SANDISK CORP43 citations96
US7447065B2Nov 4, 2008
Reducing read disturb for non-volatile storage
SANDISK CORP18 citations93
US7447086B2Nov 4, 2008
Selective program voltage ramp rates in non-volatile memory
SANDISK CORP22 citations93
US7440318B2Oct 21, 2008
Reducing read disturb for non-volatile storage
SANDISK CORP28 citations93
US7295473B2Nov 13, 2007
System for reducing read disturb for non-volatile storage
SANDISK CORP25 citations93
US7105406B2Sep 12, 2006
Self aligned non-volatile memory cell and process for fabrication
SANDISK CORP27 citations93
US7630254B2Dec 8, 2009
Starting program voltage shift with cycling of non-volatile memory
SANDISK CORP23 citations92
US7944749B2May 17, 2011
Method of low voltage programming of non-volatile memory cells
SANDISK CORP10 citations84
US7425744B2Sep 16, 2008
Fabricating logic and memory elements using multiple gate layers
SANDISK CORP7 citations74
US7961511B2Jun 14, 2011
Hybrid programming methods and systems for non-volatile memory storage elements
SANDISK CORP3 citations63
US7633812B2Dec 15, 2009
Starting program voltage shift with cycling of non-volatile memory
SANDISK CORP2 citations63
US7623389B2Nov 24, 2009
System for low voltage programming of non-volatile memory cells
SANDISK CORP3 citations63
US7265423B2Sep 4, 2007
Technique for fabricating logic elements using multiple gate layers
SANDISK CORP2 citations63
US7064034B2Jun 20, 2006
Technique for fabricating logic elements using multiple gate layers
SANDISK CORP0 citations52