Inventor
UFERT KLAUS-DIETER
DE24 patents
⚠️ This page may combine multiple inventors who share the name “UFERT KLAUS-DIETER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
12 patentsUS7368314B2May 6, 2008
Method for fabricating a resistive memory
INFINEON TECHNOLOGIES AG48 citations92
US7483293B2Jan 27, 2009
Method for improving the thermal characteristics of semiconductor memory cells
INFINEON TECHNOLOGIES AG17 citations84
US7538411B2May 26, 2009
Integrated circuit including resistivity changing memory cells
INFINEON TECHNOLOGIES AG3 citations63
US7312491B2Dec 25, 2007
Charge trapping semiconductor memory element with improved trapping dielectric
INFINEON TECHNOLOGIES AG6 citations63
US7655939B2Feb 2, 2010
Memory cell, memory device and method for the production thereof
INFINEON TECHNOLOGIES AG3 citations62
US7649242B2Jan 19, 2010
Programmable resistive memory cell with a programmable resistance layer
INFINEON TECHNOLOGIES AG6 citations62
US7511294B2Mar 31, 2009
Resistive memory element with shortened erase time
INFINEON TECHNOLOGIES AG6 citations62
US7442605B2Oct 28, 2008
Resistively switching memory
INFINEON TECHNOLOGIES AG2 citations62
US7410868B2Aug 12, 2008
Method for fabricating a nonvolatile memory element and a nonvolatile memory element
INFINEON TECHNOLOGIES AG3 citations62
US7358520B2Apr 15, 2008
Semiconductor memory cell, method for fabricating it and semiconductor memory device
INFINEON TECHNOLOGIES AG6 citations62
US7345295B2Mar 18, 2008
Semiconductor memory
INFINEON TECHNOLOGIES AG4 citations62
US7613028B2Nov 3, 2009
Solid electrolyte switching element
INFINEON TECHNOLOGIES AG0 citations52
QIMONDA AG
7 patentsUS7749805B2Jul 6, 2010
Method for manufacturing an integrated circuit including an electrolyte material layer
QIMONDA AG71 citations97
US7894253B2Feb 22, 2011
Carbon filament memory and fabrication method
QIMONDA AG24 citations92
US8030637B2Oct 4, 2011
Memory element using reversible switching between SP2 and SP3 hybridized carbon
QIMONDA AG13 citations84
US7983068B2Jul 19, 2011
Memory element with positive temperature coefficient layer
QIMONDA AG8 citations84
US7718537B2May 18, 2010
Method for manufacturing a CBRAM semiconductor memory
QIMONDA AG10 citations84
US7741630B2Jun 22, 2010
Resistive memory element and method of fabrication
QIMONDA AG3 citations63
US7787279B2Aug 31, 2010
Integrated circuit having a resistive memory
QIMONDA AG6 citations62