Inventor

LEE SHIN-AE

KR21 patents

⚠️ This page may combine multiple inventors who share the name “LEE SHIN-AE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE SHIN-AE

SAMSUNG ELECTRONICS CO LTD

Field effect transistors having multiple stacked channels

Methods of fabricating field effect transistors having multiple stacked channels

Semiconductor devices with enlarged recessed gate electrodes

Methods of fabricating field effect transistors having multiple stacked channels

Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channels

Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions

Self-aligned semiconductor contact structures and methods for fabricating the same

Field effect transistors having multiple stacked channels

Double gate MOS transistors

Metal oxide semiconductor (MOS) transistors having three dimensional channels

Self-aligned semiconductor contact structures

Field effect transistors including vertically oriented gate electrodes extending inside vertically protruding portions of a substrate

Integrated circuit structures including epitaxial silicon layers that extend from an active region through an insulation layer to a substrate

MOS transistors having inverted T-shaped gate electrodes

Methods of forming integrated circuits structures including epitaxial silicon layers in active regions

Semiconductor devices with enlarged recessed gate electrodes

Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions

Methods of manufacturing transistors and transistors having an anti-punchthrough region

Methods of fabricating semiconductor devices with enlarged recessed gate electrodes

MOS Transistors having inverted T-shaped gate electrodes and fabrication methods thereof

MANDO CORP

Vehicle control apparatus and method for controlling vehicle